Investigation of minority carrier trapping in n-type doped ZnSe using photoluminescence decay measurements

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Temperature dependent photoluminescence decay measurements have been used to study the minority carrier dynamics in iodine-doped ZnSe grown by molecular beam epitaxy. The existence of three deep acceptor levels with energies at 80, 120, and 350 meV above the valence band has been established. The 80 and 120 meV levels have a density dependence directly related to the iodine doping density whilst the level at 350 meV does not. Significant broadband donor-acceptor emission is observed from this material and appears to be associated with the acceptor level at 350 meV.© 1995 American Institute of Physics.

Original languageEnglish
Pages (from-to)61-
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

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