Abstract
A dedicated inverse Doherty amplifier is presented in this paper using commercially available 10W GaN HEMT devices. Results show that an emulated 1W peaking amplifier and a 10W carrier amplifier can be used to create a highly efficient amplification architecture. Ideal inverse active load-pull is introduced theoretically with experimental results showing good agreement with the theory. A generic characterization scan of the inverse Doherty amplifier yields state of the art drain and power added efficiency in the output power back-off. A drain and power added efficiency of 60% and 50% are obtained at 10dB output power backoff respectively with a maximum output power of 41dBm at 2.1GHz.
| Original language | English |
|---|---|
| Title of host publication | 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications |
| Publisher | IEEE |
| Number of pages | 3 |
| ISBN (Electronic) | 978-1-4673-2918-7 |
| ISBN (Print) | 978-1-4673-2915-6 |
| DOIs | |
| Publication status | Published - 2013 |
Keywords
- Digital Doherty
- Dual-drive
- Inverse active load-pull