A dedicated inverse Doherty amplifier is presented in this paper using commercially available 10W GaN HEMT devices. Results show that an emulated 1W peaking amplifier and a 10W carrier amplifier can be used to create a highly efficient amplification architecture. Ideal inverse active load-pull is introduced theoretically with experimental results showing good agreement with the theory. A generic characterization scan of the inverse Doherty amplifier yields state of the art drain and power added efficiency in the output power back-off. A drain and power added efficiency of 60% and 50% are obtained at 10dB output power backoff respectively with a maximum output power of 41dBm at 2.1GHz.
|Title of host publication||2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications|
|Number of pages||3|
|Publication status||Published - 2013|
- Digital Doherty
- Inverse active load-pull