Abstract
A dedicated inverse Doherty amplifier is presented in this paper using commercially available 10W GaN HEMT devices. Results show that an emulated 1W peaking amplifier and a 10W carrier amplifier can be used to create a highly efficient amplification architecture. Ideal inverse active load-pull is introduced theoretically with experimental results showing good agreement with the theory. A generic characterization scan of the inverse Doherty amplifier yields state of the art drain and power added efficiency in the output power back-off. A drain and power added efficiency of 60% and 50% are obtained at 10dB output power backoff respectively with a maximum output power of 41dBm at 2.1GHz.
Original language | English |
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Title of host publication | 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications |
Publisher | IEEE |
Number of pages | 3 |
ISBN (Electronic) | 978-1-4673-2918-7 |
ISBN (Print) | 978-1-4673-2915-6 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Digital Doherty
- Dual-drive
- Inverse active load-pull