Intraband carrier dynamics in semiconductor optical amplifier-based switch

A Gomez-Iglesias, J G Fenn, M Mazilu, R J Manning, Alan Miller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present interferometric switching experiments using femtosecond pulses with an InGaAs semiconductor optical amplifier (SOA). Our measurements reveal significant refractive index changes occurring within a few picoseconds. The timescale and power dependence of this ultrafast feature, together with the predictions of a phenomenological model, strongly suggest carrier heating as responsible.

Original languageEnglish
Title of host publicationPhysics of Semiconductors, Pts A and B
EditorsJ Menendez, CG VanDeWalle
Place of PublicationMELVILLE
PublisherAmerican Institute of Physics
Pages1182-1183
Number of pages2
ISBN (Print)0-7354-0257-4
Publication statusPublished - 2005
Event27th International Conference on the Physics of Semiconductors - Flagstaff, Arizona, Argentina
Duration: 26 Jul 200430 Jul 2004

Conference

Conference27th International Conference on the Physics of Semiconductors
Abbreviated titleICPS-27
CountryArgentina
CityFlagstaff, Arizona
Period26/07/0430/07/04

Cite this

Gomez-Iglesias, A., Fenn, J. G., Mazilu, M., Manning, R. J., & Miller, A. (2005). Intraband carrier dynamics in semiconductor optical amplifier-based switch. In J. Menendez, & CG. VanDeWalle (Eds.), Physics of Semiconductors, Pts A and B (pp. 1182-1183). American Institute of Physics.