Intraband absorption in InAs/GaAs self-assembled quantum Dots

J. Z. Zhang; I. Galbraith

doi:10.1063/1.1994323

Intraband absorption in InAs/GaAs self-assembled quantum Dots

J. Z. Zhang, I. Galbraith

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using envelope function theory, intraband absorption is calculated for InAs/GaAs truncated pyramidal quantum dots. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with experiment [Appl. Phys. Lett. 82, 630(2003)] and is due to the dot geometry. The WL can induce both in-plane- and z-polarized absorption. For strong normal incidence photodetection, absorption from the first excited state should be exploited. © 2005 American Institute of Physics.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	749-750
Number of pages	2
Volume	772
DOIs	https://doi.org/10.1063/1.1994323
Publication status	Published - 30 Jun 2005
Event	27th International Conference on the Physics of Semiconductors - Flagstaff, Arizona, Argentina Duration: 26 Jul 2004 → 30 Jul 2004

Conference

Conference	27th International Conference on the Physics of Semiconductors
Abbreviated title	ICPS-27
Country/Territory	Argentina
City	Flagstaff, Arizona
Period	26/07/04 → 30/07/04

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10.1063/1.1994323

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title = "Intraband absorption in InAs/GaAs self-assembled quantum Dots",

abstract = "Using envelope function theory, intraband absorption is calculated for InAs/GaAs truncated pyramidal quantum dots. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with experiment [Appl. Phys. Lett. 82, 630(2003)] and is due to the dot geometry. The WL can induce both in-plane- and z-polarized absorption. For strong normal incidence photodetection, absorption from the first excited state should be exploited. {\textcopyright} 2005 American Institute of Physics.",

author = "Zhang, {J. Z.} and I. Galbraith",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994323",

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note = "27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

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TY - GEN

T1 - Intraband absorption in InAs/GaAs self-assembled quantum Dots

AU - Zhang, J. Z.

AU - Galbraith, I.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - Using envelope function theory, intraband absorption is calculated for InAs/GaAs truncated pyramidal quantum dots. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with experiment [Appl. Phys. Lett. 82, 630(2003)] and is due to the dot geometry. The WL can induce both in-plane- and z-polarized absorption. For strong normal incidence photodetection, absorption from the first excited state should be exploited. © 2005 American Institute of Physics.

AB - Using envelope function theory, intraband absorption is calculated for InAs/GaAs truncated pyramidal quantum dots. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with experiment [Appl. Phys. Lett. 82, 630(2003)] and is due to the dot geometry. The WL can induce both in-plane- and z-polarized absorption. For strong normal incidence photodetection, absorption from the first excited state should be exploited. © 2005 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=33749486267&partnerID=8YFLogxK

U2 - 10.1063/1.1994323

DO - 10.1063/1.1994323

M3 - Conference contribution

SN - 0735402574

SN - 9780735402577

VL - 772

SP - 749

EP - 750

BT - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

T2 - 27th International Conference on the Physics of Semiconductors

Y2 - 26 July 2004 through 30 July 2004

ER -

Intraband absorption in InAs/GaAs self-assembled quantum Dots

Abstract

Conference

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