Intraband absorption in InAs/GaAs self-assembled quantum Dots

J. Z. Zhang, I. Galbraith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using envelope function theory, intraband absorption is calculated for InAs/GaAs truncated pyramidal quantum dots. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with experiment [Appl. Phys. Lett. 82, 630(2003)] and is due to the dot geometry. The WL can induce both in-plane- and z-polarized absorption. For strong normal incidence photodetection, absorption from the first excited state should be exploited. © 2005 American Institute of Physics.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Pages749-750
Number of pages2
Volume772
DOIs
Publication statusPublished - 30 Jun 2005
Event27th International Conference on the Physics of Semiconductors - Flagstaff, Arizona, Argentina
Duration: 26 Jul 200430 Jul 2004

Conference

Conference27th International Conference on the Physics of Semiconductors
Abbreviated titleICPS-27
CountryArgentina
CityFlagstaff, Arizona
Period26/07/0430/07/04

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