Using envelope function theory, intraband absorption is calculated for InAs/GaAs truncated pyramidal quantum dots. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with experiment [Appl. Phys. Lett. 82, 630(2003)] and is due to the dot geometry. The WL can induce both in-plane- and z-polarized absorption. For strong normal incidence photodetection, absorption from the first excited state should be exploited. © 2005 American Institute of Physics.
|Title of host publication||PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27|
|Number of pages||2|
|Publication status||Published - 30 Jun 2005|
|Event||27th International Conference on the Physics of Semiconductors - Flagstaff, Arizona, Argentina|
Duration: 26 Jul 2004 → 30 Jul 2004
|Conference||27th International Conference on the Physics of Semiconductors|
|Period||26/07/04 → 30/07/04|