Interwell relaxation times in p-Si SiGe asymmetric quantum well structures: Role of interface roughness

Marco Califano, N. Q. Vinh, P. J. Phillips, Z. Ikonić, R. W. Kelsall, P. Harrison, C. R. Pidgeon, B. N. Murdin, D. J. Paul, P. Townsend, J. Zhang, I. M. Ross, A. G. Cullis

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