Intersubband lifetimes in Si/SiGe quantum wells

W. Heiss; E. Gornik; C. R. Pidgeon; S. C. Lee; I. Galbraith; B. Murdin; C. J G M Langerak; M. Helm; H. Hertle; F. Schäffler

doi:10.1016/0038-1101(95)00213-8

Intersubband lifetimes in Si/SiGe quantum wells

W. Heiss, E. Gornik, C. R. Pidgeon, S. C. Lee, I. Galbraith, B. Murdin, C. J G M Langerak, M. Helm, H. Hertle, F. Schäffler

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In the present work we report the first measurement of intersubband lifetimes in Si/Si_1-xGe_x quantum well samples. We have determined T₁ by a time resolved pump and probe experiment using the far infrared picosecond free electron laser source FELIX at Rijnhuizen, the Netherlands. In a sample with a well width of 50 Å and a sheet density of 2.1 × 10¹² cm^-2 we find a lifetime of 30 ps while 20 ps is observed for a density of 1.1 × 10¹²cm^-2 and a well width of 75 Å. We discuss acoustic phonon, as well as optical phonon intersubband scattering as possible limiting processes for the observed lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells.

Original language	English
Pages (from-to)	59-62
Number of pages	4
Journal	Solid-State Electronics
Volume	40
Issue number	1-8
DOIs	https://doi.org/10.1016/0038-1101(95)00213-8
Publication status	Published - 1996

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@article{a0d324c04547468eb35cf4b18642cd4f,

title = "Intersubband lifetimes in Si/SiGe quantum wells",

abstract = "In the present work we report the first measurement of intersubband lifetimes in Si/Si1-xGex quantum well samples. We have determined T1 by a time resolved pump and probe experiment using the far infrared picosecond free electron laser source FELIX at Rijnhuizen, the Netherlands. In a sample with a well width of 50 {\AA} and a sheet density of 2.1 × 1012 cm-2 we find a lifetime of 30 ps while 20 ps is observed for a density of 1.1 × 1012cm-2 and a well width of 75 {\AA}. We discuss acoustic phonon, as well as optical phonon intersubband scattering as possible limiting processes for the observed lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells.",

author = "W. Heiss and E. Gornik and Pidgeon, {C. R.} and Lee, {S. C.} and I. Galbraith and B. Murdin and Langerak, {C. J G M} and M. Helm and H. Hertle and F. Sch{\"a}ffler",

year = "1996",

doi = "10.1016/0038-1101(95)00213-8",

language = "English",

volume = "40",

pages = "59--62",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "1-8",

}

TY - JOUR

T1 - Intersubband lifetimes in Si/SiGe quantum wells

AU - Heiss, W.

AU - Gornik, E.

AU - Pidgeon, C. R.

AU - Lee, S. C.

AU - Galbraith, I.

AU - Murdin, B.

AU - Langerak, C. J G M

AU - Helm, M.

AU - Hertle, H.

AU - Schäffler, F.

PY - 1996

Y1 - 1996

N2 - In the present work we report the first measurement of intersubband lifetimes in Si/Si1-xGex quantum well samples. We have determined T1 by a time resolved pump and probe experiment using the far infrared picosecond free electron laser source FELIX at Rijnhuizen, the Netherlands. In a sample with a well width of 50 Å and a sheet density of 2.1 × 1012 cm-2 we find a lifetime of 30 ps while 20 ps is observed for a density of 1.1 × 1012cm-2 and a well width of 75 Å. We discuss acoustic phonon, as well as optical phonon intersubband scattering as possible limiting processes for the observed lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells.

AB - In the present work we report the first measurement of intersubband lifetimes in Si/Si1-xGex quantum well samples. We have determined T1 by a time resolved pump and probe experiment using the far infrared picosecond free electron laser source FELIX at Rijnhuizen, the Netherlands. In a sample with a well width of 50 Å and a sheet density of 2.1 × 1012 cm-2 we find a lifetime of 30 ps while 20 ps is observed for a density of 1.1 × 1012cm-2 and a well width of 75 Å. We discuss acoustic phonon, as well as optical phonon intersubband scattering as possible limiting processes for the observed lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells.

U2 - 10.1016/0038-1101(95)00213-8

DO - 10.1016/0038-1101(95)00213-8

M3 - Article

SN - 0038-1101

VL - 40

SP - 59

EP - 62

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1-8

ER -

Intersubband lifetimes in Si/SiGe quantum wells

Abstract

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