Intersubband lifetimes in Si/SiGe quantum wells

W. Heiss, E. Gornik, C. R. Pidgeon, S. C. Lee, I. Galbraith, B. Murdin, C. J G M Langerak, M. Helm, H. Hertle, F. Schäffler

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In the present work we report the first measurement of intersubband lifetimes in Si/Si1-xGex quantum well samples. We have determined T1 by a time resolved pump and probe experiment using the far infrared picosecond free electron laser source FELIX at Rijnhuizen, the Netherlands. In a sample with a well width of 50 Å and a sheet density of 2.1 × 1012 cm-2 we find a lifetime of 30 ps while 20 ps is observed for a density of 1.1 × 1012cm-2 and a well width of 75 Å. We discuss acoustic phonon, as well as optical phonon intersubband scattering as possible limiting processes for the observed lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells.

Original languageEnglish
Pages (from-to)59-62
Number of pages4
JournalSolid-State Electronics
Issue number1-8
Publication statusPublished - 1996


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