Intersubband lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells

W Heiss, E Gornik, Carl Pidgeon, B N Murdin, C J G M Langerak, M Helm, H Hertle, F Schaffler

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)59-63
Number of pages5
JournalSolid-State Electronics
Volume40
Publication statusPublished - 1996

Cite this

Heiss, W., Gornik, E., Pidgeon, C., Murdin, B. N., Langerak, C. J. G. M., Helm, M., Hertle, H., & Schaffler, F. (1996). Intersubband lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells. Solid-State Electronics, 40, 59-63.