INTERFACIAL PROBLEMS IN PREPARING a-Si: H FETs.

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Original language	English
Pages (from-to)	153-159
Number of pages	7
Journal	IEE Proceedings I (Solid-State and Electron Devices)
Volume	133
Issue number	4
Publication status	Published - Aug 1986

Cite this

@article{e12e9004b3de4b5d90dfe5eb60778609,

title = "INTERFACIAL PROBLEMS IN PREPARING a-Si: H FETs.",

author = "Manookian, \{W. Z.\} and Wilson, \{J. I B\}",

year = "1986",

month = aug,

language = "English",

volume = "133",

pages = "153--159",

journal = "IEE Proceedings I (Solid-State and Electron Devices)",

issn = "2053-7980",

publisher = "Institution of Electrical Engineers (IEE)",

number = "4",

}

TY - JOUR

T1 - INTERFACIAL PROBLEMS IN PREPARING a-Si

T2 - H FETs.

AU - Manookian, W. Z.

AU - Wilson, J. I B

PY - 1986/8

Y1 - 1986/8

UR - https://www.scopus.com/pages/publications/0022768474

M3 - Article

SN - 2053-7980

VL - 133

SP - 153

EP - 159

JO - IEE Proceedings I (Solid-State and Electron Devices)

JF - IEE Proceedings I (Solid-State and Electron Devices)

IS - 4

ER -