InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation

D. J. Goodwill; F. A P Tooley; A. C. Walker; M. R. Taghizadeh; M. McElhinney; F. Pottier; C. R. Stanley; D. G. Vass; I. Underwood; M. W G Snook; M. H. Dunn; J. Hong; B. D. Sinclair

InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation

D. J. Goodwill
, F. A P Tooley
, A. C. Walker
, M. R. Taghizadeh
, M. McElhinney
, F. Pottier
, C. R. Stanley
, D. G. Vass
, I. Underwood
, M. W G Snook
, M. H. Dunn
, J. Hong
, B. D. Sinclair

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In designing smart pixels that combine CMOS with III-V semiconductor self-electro-optic effect devices (SEEDs), the flip-chip bonding procedure was proven feasible. To eliminate the limitations set by laser power on this type of system, III-V devices were fabricated for the 1047-1064 nm wavelength region. A strained InGaAs/GaAs multiple quantum well, strain-balanced to a relaxing In(Ga,Al)As buffer cultivated by molecular beam epitaxy on a GaAs substrate was the favored technology for SEEDs. The subsequent arrayed symmetric SEEDs flip-chip bonded to a silicon CMOS circuit proved to be an effective means to fabricate a spatial light modulator.

Original language	English
Title of host publication	Proceedings of the LEOS 1994 Summer Topical Meeting
Pages	20-21
Number of pages	2
Publication status	Published - 1994
Event	LEOS 1994 Summer Topical Meeting - Lake Tahoe, NV, United States Duration: 11 Jul 1994 → 13 Jul 1994

Conference

Conference	LEOS 1994 Summer Topical Meeting
Country/Territory	United States
City	Lake Tahoe, NV
Period	11/07/94 → 13/07/94

Cite this

@inproceedings{715d22b5d41f4fafaa40798ab8ee40f7,

title = "InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation",

abstract = "In designing smart pixels that combine CMOS with III-V semiconductor self-electro-optic effect devices (SEEDs), the flip-chip bonding procedure was proven feasible. To eliminate the limitations set by laser power on this type of system, III-V devices were fabricated for the 1047-1064 nm wavelength region. A strained InGaAs/GaAs multiple quantum well, strain-balanced to a relaxing In(Ga,Al)As buffer cultivated by molecular beam epitaxy on a GaAs substrate was the favored technology for SEEDs. The subsequent arrayed symmetric SEEDs flip-chip bonded to a silicon CMOS circuit proved to be an effective means to fabricate a spatial light modulator.",

author = "Goodwill, \{D. J.\} and Tooley, \{F. A P\} and Walker, \{A. C.\} and Taghizadeh, \{M. R.\} and M. McElhinney and F. Pottier and Stanley, \{C. R.\} and Vass, \{D. G.\} and I. Underwood and Snook, \{M. W G\} and Dunn, \{M. H.\} and J. Hong and Sinclair, \{B. D.\}",

year = "1994",

language = "English",

pages = "20--21",

booktitle = "Proceedings of the LEOS 1994 Summer Topical Meeting",

note = "LEOS 1994 Summer Topical Meeting ; Conference date: 11-07-1994 Through 13-07-1994",

}

Goodwill, DJ, Tooley, FAP, Walker, AC, Taghizadeh, MR, McElhinney, M, Pottier, F, Stanley, CR, Vass, DG, Underwood, I, Snook, MWG, Dunn, MH, Hong, J & Sinclair, BD 1994, InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation. in Proceedings of the LEOS 1994 Summer Topical Meeting. pp. 20-21, LEOS 1994 Summer Topical Meeting, Lake Tahoe, NV, United States, 11/07/94.

TY - GEN

T1 - InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation

AU - Goodwill, D. J.

AU - Tooley, F. A P

AU - Walker, A. C.

AU - Taghizadeh, M. R.

AU - McElhinney, M.

AU - Pottier, F.

AU - Stanley, C. R.

AU - Vass, D. G.

AU - Underwood, I.

AU - Snook, M. W G

AU - Dunn, M. H.

AU - Hong, J.

AU - Sinclair, B. D.

PY - 1994

Y1 - 1994

N2 - In designing smart pixels that combine CMOS with III-V semiconductor self-electro-optic effect devices (SEEDs), the flip-chip bonding procedure was proven feasible. To eliminate the limitations set by laser power on this type of system, III-V devices were fabricated for the 1047-1064 nm wavelength region. A strained InGaAs/GaAs multiple quantum well, strain-balanced to a relaxing In(Ga,Al)As buffer cultivated by molecular beam epitaxy on a GaAs substrate was the favored technology for SEEDs. The subsequent arrayed symmetric SEEDs flip-chip bonded to a silicon CMOS circuit proved to be an effective means to fabricate a spatial light modulator.

AB - In designing smart pixels that combine CMOS with III-V semiconductor self-electro-optic effect devices (SEEDs), the flip-chip bonding procedure was proven feasible. To eliminate the limitations set by laser power on this type of system, III-V devices were fabricated for the 1047-1064 nm wavelength region. A strained InGaAs/GaAs multiple quantum well, strain-balanced to a relaxing In(Ga,Al)As buffer cultivated by molecular beam epitaxy on a GaAs substrate was the favored technology for SEEDs. The subsequent arrayed symmetric SEEDs flip-chip bonded to a silicon CMOS circuit proved to be an effective means to fabricate a spatial light modulator.

UR - https://www.scopus.com/pages/publications/0028558197

M3 - Conference contribution

SP - 20

EP - 21

BT - Proceedings of the LEOS 1994 Summer Topical Meeting

T2 - LEOS 1994 Summer Topical Meeting

Y2 - 11 July 1994 through 13 July 1994

ER -

InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation

Abstract

Conference

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