InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation

D. J. Goodwill, F. A P Tooley, A. C. Walker, M. R. Taghizadeh, M. McElhinney, F. Pottier, C. R. Stanley, D. G. Vass, I. Underwood, M. W G Snook, M. H. Dunn, J. Hong, B. D. Sinclair

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In designing smart pixels that combine CMOS with III-V semiconductor self-electro-optic effect devices (SEEDs), the flip-chip bonding procedure was proven feasible. To eliminate the limitations set by laser power on this type of system, III-V devices were fabricated for the 1047-1064 nm wavelength region. A strained InGaAs/GaAs multiple quantum well, strain-balanced to a relaxing In(Ga,Al)As buffer cultivated by molecular beam epitaxy on a GaAs substrate was the favored technology for SEEDs. The subsequent arrayed symmetric SEEDs flip-chip bonded to a silicon CMOS circuit proved to be an effective means to fabricate a spatial light modulator.

Original languageEnglish
Title of host publicationProceedings of the LEOS 1994 Summer Topical Meeting
Pages20-21
Number of pages2
Publication statusPublished - 1994
EventLEOS 1994 Summer Topical Meeting - Lake Tahoe, NV, United States
Duration: 11 Jul 199413 Jul 1994

Conference

ConferenceLEOS 1994 Summer Topical Meeting
CountryUnited States
CityLake Tahoe, NV
Period11/07/9413/07/94

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    Goodwill, D. J., Tooley, F. A. P., Walker, A. C., Taghizadeh, M. R., McElhinney, M., Pottier, F., Stanley, C. R., Vass, D. G., Underwood, I., Snook, M. W. G., Dunn, M. H., Hong, J., & Sinclair, B. D. (1994). InGaAs S-SEEDs and silicon CMOS smart pixels for 1047-1064nm operation. In Proceedings of the LEOS 1994 Summer Topical Meeting (pp. 20-21)