Infrared free electron laser measurement of two-photon absorption in InAs and InSb over a wide spectral range

B. N. Murdin; C. R. Pidgeon; A. K. Kar; D. A. Jaroszynski; J. M. Ortega; R. Prazeres; F. Glotin; D. C. Hutchings

Infrared free electron laser measurement of two-photon absorption in InAs and InSb over a wide spectral range

B. N. Murdin, C. R. Pidgeon, A. K. Kar, D. A. Jaroszynski, J. M. Ortega, R. Prazeres, F. Glotin, D. C. Hutchings

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Two-photon absorption has been measured for the first time over a wide spectral range in InAs and InSb utilizing the broad tunability of the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Ravonnement Électromagnetique (LURE). In a transmission experiment we have observed strong power limiting at wavelengths between the two-photon and one-photon absorption thresholds associated with induced (hole) absorption produced by direct interband two-photon transitions. We have determined the two-photon absorption (TPA) coefficient (ß) over the entire range by fitting the power-limiting effect with a simple theoretical model. The results are consistent with a model for the two-photon transition probability incorporating the Kane band structure for narrow gap semiconductors. © 1993.

Original language	English
Pages (from-to)	89-93
Number of pages	5
Journal	Optical Materials
Volume	2
Issue number	2
Publication status	Published - Apr 1993

Cite this

@article{d1a3b72ba9094f40baa987c2c39cea7f,

title = "Infrared free electron laser measurement of two-photon absorption in InAs and InSb over a wide spectral range",

abstract = "Two-photon absorption has been measured for the first time over a wide spectral range in InAs and InSb utilizing the broad tunability of the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Ravonnement {\'E}lectromagnetique (LURE). In a transmission experiment we have observed strong power limiting at wavelengths between the two-photon and one-photon absorption thresholds associated with induced (hole) absorption produced by direct interband two-photon transitions. We have determined the two-photon absorption (TPA) coefficient ({\ss}) over the entire range by fitting the power-limiting effect with a simple theoretical model. The results are consistent with a model for the two-photon transition probability incorporating the Kane band structure for narrow gap semiconductors. {\textcopyright} 1993.",

author = "Murdin, \{B. N.\} and Pidgeon, \{C. R.\} and Kar, \{A. K.\} and Jaroszynski, \{D. A.\} and Ortega, \{J. M.\} and R. Prazeres and F. Glotin and Hutchings, \{D. C.\}",

year = "1993",

month = apr,

language = "English",

volume = "2",

pages = "89--93",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Infrared free electron laser measurement of two-photon absorption in InAs and InSb over a wide spectral range

AU - Murdin, B. N.

AU - Pidgeon, C. R.

AU - Kar, A. K.

AU - Jaroszynski, D. A.

AU - Ortega, J. M.

AU - Prazeres, R.

AU - Glotin, F.

AU - Hutchings, D. C.

PY - 1993/4

Y1 - 1993/4

N2 - Two-photon absorption has been measured for the first time over a wide spectral range in InAs and InSb utilizing the broad tunability of the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Ravonnement Électromagnetique (LURE). In a transmission experiment we have observed strong power limiting at wavelengths between the two-photon and one-photon absorption thresholds associated with induced (hole) absorption produced by direct interband two-photon transitions. We have determined the two-photon absorption (TPA) coefficient (ß) over the entire range by fitting the power-limiting effect with a simple theoretical model. The results are consistent with a model for the two-photon transition probability incorporating the Kane band structure for narrow gap semiconductors. © 1993.

AB - Two-photon absorption has been measured for the first time over a wide spectral range in InAs and InSb utilizing the broad tunability of the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Ravonnement Électromagnetique (LURE). In a transmission experiment we have observed strong power limiting at wavelengths between the two-photon and one-photon absorption thresholds associated with induced (hole) absorption produced by direct interband two-photon transitions. We have determined the two-photon absorption (TPA) coefficient (ß) over the entire range by fitting the power-limiting effect with a simple theoretical model. The results are consistent with a model for the two-photon transition probability incorporating the Kane band structure for narrow gap semiconductors. © 1993.

UR - https://www.scopus.com/pages/publications/0027578795

M3 - Article

SN - 0925-3467

VL - 2

SP - 89

EP - 93

JO - Optical Materials

JF - Optical Materials

IS - 2

ER -

Infrared free electron laser measurement of two-photon absorption in InAs and InSb over a wide spectral range

Abstract

Other files and links

Fingerprint

Cite this