Infrared free electron laser measurement of two-photon absorption in InAs and InSb over a wide spectral range

B. N. Murdin, C. R. Pidgeon, A. K. Kar, D. A. Jaroszynski, J. M. Ortega, R. Prazeres, F. Glotin, D. C. Hutchings

Research output: Contribution to journalArticlepeer-review

Abstract

Two-photon absorption has been measured for the first time over a wide spectral range in InAs and InSb utilizing the broad tunability of the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Ravonnement Électromagnetique (LURE). In a transmission experiment we have observed strong power limiting at wavelengths between the two-photon and one-photon absorption thresholds associated with induced (hole) absorption produced by direct interband two-photon transitions. We have determined the two-photon absorption (TPA) coefficient (ß) over the entire range by fitting the power-limiting effect with a simple theoretical model. The results are consistent with a model for the two-photon transition probability incorporating the Kane band structure for narrow gap semiconductors. © 1993.

Original languageEnglish
Pages (from-to)89-93
Number of pages5
JournalOptical Materials
Volume2
Issue number2
Publication statusPublished - Apr 1993

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