Two-photon absorption has been measured for the first time over a wide spectral range in InAs and InSb utilizing the broad tunability of the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Ravonnement Électromagnetique (LURE). In a transmission experiment we have observed strong power limiting at wavelengths between the two-photon and one-photon absorption thresholds associated with induced (hole) absorption produced by direct interband two-photon transitions. We have determined the two-photon absorption (TPA) coefficient (ß) over the entire range by fitting the power-limiting effect with a simple theoretical model. The results are consistent with a model for the two-photon transition probability incorporating the Kane band structure for narrow gap semiconductors. © 1993.
|Number of pages||5|
|Publication status||Published - Apr 1993|