Influence of SHI irradiation on the structure and surface topography of CdTe thin films on flexible substrate

S. Chandramohan, R. Sathyamoorthy*, P. Sudhagar, D. Kanjilal, D. Kabiraj, K. Asokan, V. Ganesan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


Impact of ion irradiation on thin films is an emerging area for materials modification. CdTe thin films grown by thermal evaporation on flexible molybdenum (Mo) substrate were irradiated with Swift (100 MeV) Ag+7 ions for various ion fluence in the range 1012 -1013 ions/cm2. The modifications in the composition, structure and surface morphology have been studied as a function of ion fluence. The Energy Dispersive X-ray Analysis (EDS) shows slightly Te-rich composition for both as-grown and irradiated films with no significant change after irradiation. X-ray diffraction (XRD) analysis indicates a consistent shift in the (111) peak position towards higher diffraction angle and an increase in the full width at half maximum (FWHM) with increase in ion fluence. The change in the residual stress during irradiation has been evaluated and is related to the corresponding microstructural changes in the films. The initial tensile stress is found to be relaxed after irradiation. Atomic Force Microscopy (AFM) studies revealed significant grain splitting after irradiation and formation of hillocks at higher ion fluence. The surface roughness was significantly increased at higher ion fluence.

Original languageEnglish
Pages (from-to)1093-1098
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Issue number11
Publication statusPublished - Nov 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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