TY - JOUR
T1 - Influence of SHI irradiation on the structure and surface topography of CdTe thin films on flexible substrate
AU - Chandramohan, S.
AU - Sathyamoorthy, R.
AU - Sudhagar, P.
AU - Kanjilal, D.
AU - Kabiraj, D.
AU - Asokan, K.
AU - Ganesan, V.
N1 - Funding Information:
Acknowledgments This work was supported by the Inter University Accelerator Centre (IUAC), New Delhi, India through the Project UFUP 34319. The authors cordially acknowledge the help extended by technical staff of Pelletron group during the irradiation experiment. Two of the authors RS and SCM wish to acknowledge Mr. Mohan Gangrade, Junior Engineer, Low-temperature laboratory, UGC-DAE Consortium for Scientific Research, Indore Centre for his support to carryout the AFM measurements and Dr. D.M. Phase, Scientist and Mr. Vinay Ahire, Junior engineer for EDA analysis. One of the authors (RS) gratefully acknowledges University Grants Commission (UGC), New Delhi for awarding UGC-Research Award [Project No. F-30-1/2004 (SA-II)].
PY - 2007/11
Y1 - 2007/11
N2 - Impact of ion irradiation on thin films is an emerging area for materials modification. CdTe thin films grown by thermal evaporation on flexible molybdenum (Mo) substrate were irradiated with Swift (100 MeV) Ag+7 ions for various ion fluence in the range 1012 -1013 ions/cm2. The modifications in the composition, structure and surface morphology have been studied as a function of ion fluence. The Energy Dispersive X-ray Analysis (EDS) shows slightly Te-rich composition for both as-grown and irradiated films with no significant change after irradiation. X-ray diffraction (XRD) analysis indicates a consistent shift in the (111) peak position towards higher diffraction angle and an increase in the full width at half maximum (FWHM) with increase in ion fluence. The change in the residual stress during irradiation has been evaluated and is related to the corresponding microstructural changes in the films. The initial tensile stress is found to be relaxed after irradiation. Atomic Force Microscopy (AFM) studies revealed significant grain splitting after irradiation and formation of hillocks at higher ion fluence. The surface roughness was significantly increased at higher ion fluence.
AB - Impact of ion irradiation on thin films is an emerging area for materials modification. CdTe thin films grown by thermal evaporation on flexible molybdenum (Mo) substrate were irradiated with Swift (100 MeV) Ag+7 ions for various ion fluence in the range 1012 -1013 ions/cm2. The modifications in the composition, structure and surface morphology have been studied as a function of ion fluence. The Energy Dispersive X-ray Analysis (EDS) shows slightly Te-rich composition for both as-grown and irradiated films with no significant change after irradiation. X-ray diffraction (XRD) analysis indicates a consistent shift in the (111) peak position towards higher diffraction angle and an increase in the full width at half maximum (FWHM) with increase in ion fluence. The change in the residual stress during irradiation has been evaluated and is related to the corresponding microstructural changes in the films. The initial tensile stress is found to be relaxed after irradiation. Atomic Force Microscopy (AFM) studies revealed significant grain splitting after irradiation and formation of hillocks at higher ion fluence. The surface roughness was significantly increased at higher ion fluence.
UR - http://www.scopus.com/inward/record.url?scp=34548163130&partnerID=8YFLogxK
U2 - 10.1007/s10854-007-9137-4
DO - 10.1007/s10854-007-9137-4
M3 - Article
AN - SCOPUS:34548163130
SN - 0957-4522
VL - 18
SP - 1093
EP - 1098
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 11
ER -