Influence of magnesium on p-type doping and optoelectronic properties of Zn1-xMgxSe-based heterostructures

B. Vögele; C. Morhain; B. Urbaszek; S. A. Telfer; K. A. Prior; B. C. Cavenett

doi:10.1016/S0022-0248(98)01501-2

Influence of magnesium on p-type doping and optoelectronic properties of Zn_1-xMg_xSe-based heterostructures

B. Vögele
, C. Morhain
, B. Urbaszek
, S. A. Telfer
, K. A. Prior
, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Zn_1-xMg_xSe-based heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs substrates. The structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells are reported. The results of the investigation with respect to the influence of the magnesium incorporation on the doping behavior of ZnMgSe:N materials are described.

Original language	English
Pages (from-to)	950-953
Number of pages	4
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(98)01501-2
Publication status	Published - May 1999
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 31 Aug 1998 → 4 Sept 1998

Access to Document

10.1016/S0022-0248(98)01501-2

Cite this

@article{23d9224427994333b71cde9f0a378aea,

title = "Influence of magnesium on p-type doping and optoelectronic properties of Zn1-xMgxSe-based heterostructures",

abstract = "Zn1-xMgxSe-based heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs substrates. The structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells are reported. The results of the investigation with respect to the influence of the magnesium incorporation on the doping behavior of ZnMgSe:N materials are described.",

author = "B. V{\"o}gele and C. Morhain and B. Urbaszek and Telfer, \{S. A.\} and Prior, \{K. A.\} and Cavenett, \{B. C.\}",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01501-2",

language = "English",

volume = "201",

pages = "950--953",

journal = "Journal of Crystal Growth",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",

}

TY - JOUR

T1 - Influence of magnesium on p-type doping and optoelectronic properties of Zn1-xMgxSe-based heterostructures

AU - Vögele, B.

AU - Morhain, C.

AU - Urbaszek, B.

AU - Telfer, S. A.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1999/5

Y1 - 1999/5

N2 - Zn1-xMgxSe-based heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs substrates. The structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells are reported. The results of the investigation with respect to the influence of the magnesium incorporation on the doping behavior of ZnMgSe:N materials are described.

AB - Zn1-xMgxSe-based heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs substrates. The structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells are reported. The results of the investigation with respect to the influence of the magnesium incorporation on the doping behavior of ZnMgSe:N materials are described.

UR - https://www.scopus.com/pages/publications/0344182449

U2 - 10.1016/S0022-0248(98)01501-2

DO - 10.1016/S0022-0248(98)01501-2

M3 - Article

VL - 201

SP - 950

EP - 953

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)

Y2 - 31 August 1998 through 4 September 1998

ER -

Influence of magnesium on p-type doping and optoelectronic properties of Zn_1-xMg_xSe-based heterostructures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this