Influence of magnesium on p-type doping and optoelectronic properties of Zn1-xMgxSe-based heterostructures

B. Vögele, C. Morhain, B. Urbaszek, S. A. Telfer, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Zn1-xMgxSe-based heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs substrates. The structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells are reported. The results of the investigation with respect to the influence of the magnesium incorporation on the doping behavior of ZnMgSe:N materials are described.

Original languageEnglish
Pages (from-to)950-953
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - May 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 31 Aug 19984 Sep 1998

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