Zn1-xMgxSe-based heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs substrates. The structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells are reported. The results of the investigation with respect to the influence of the magnesium incorporation on the doping behavior of ZnMgSe:N materials are described.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - May 1999|
|Event||Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes|
Duration: 31 Aug 1998 → 4 Sep 1998