Abstract
Zn1-xMgxSe-based heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs substrates. The structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells are reported. The results of the investigation with respect to the influence of the magnesium incorporation on the doping behavior of ZnMgSe:N materials are described.
Original language | English |
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Pages (from-to) | 950-953 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 201 |
DOIs | |
Publication status | Published - May 1999 |
Event | Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 31 Aug 1998 → 4 Sept 1998 |