INFLUENCE OF GROWTH INTERRUPTION ON INVERTED INTERFACE QUALITY IN SINGLE ALAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

J ZHANG, P DAWSON, J H NEAVE, K J HUGILL, I GALBRAITH, P N FAWCETT, B A JOYCE

Research output: Contribution to journal › Article › peer-review

Cite this

@article{988c27e4386d465a8fb3d64866ecd6f7,

title = "INFLUENCE OF GROWTH INTERRUPTION ON INVERTED INTERFACE QUALITY IN SINGLE ALAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY",

author = "J ZHANG and P DAWSON and NEAVE, \{J H\} and HUGILL, \{K J\} and I GALBRAITH and FAWCETT, \{P N\} and JOYCE, \{B A\}",

year = "1990",

month = dec,

day = "1",

language = "English",

volume = "68",

pages = "5595--5600",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - INFLUENCE OF GROWTH INTERRUPTION ON INVERTED INTERFACE QUALITY IN SINGLE ALAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

AU - ZHANG, J

AU - DAWSON, P

AU - NEAVE, J H

AU - HUGILL, K J

AU - GALBRAITH, I

AU - FAWCETT, P N

AU - JOYCE, B A

PY - 1990/12/1

Y1 - 1990/12/1

M3 - Article

SN - 0021-8979

VL - 68

SP - 5595

EP - 5600

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -