INFLUENCE OF GROWTH INTERRUPTION ON INVERTED INTERFACE QUALITY IN SINGLE ALAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

J ZHANG, P DAWSON, J H NEAVE, K J HUGILL, I GALBRAITH, P N FAWCETT, B A JOYCE

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)5595-5600
Number of pages6
JournalJournal of Applied Physics
Volume68
Issue number11
Publication statusPublished - 1 Dec 1990

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ZHANG, J., DAWSON, P., NEAVE, J. H., HUGILL, K. J., GALBRAITH, I., FAWCETT, P. N., & JOYCE, B. A. (1990). INFLUENCE OF GROWTH INTERRUPTION ON INVERTED INTERFACE QUALITY IN SINGLE ALAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics, 68(11), 5595-5600.