This paper presents a simulation-supported experimental investigation into the properties of trench isolated highly doped (nphosphorus ∼2.9× 1019 cm-3) n -type silicon on insulator isolated double quantum dots (IDQDs) with integrated single electron transistor (SET) for charge sensing. IDQD and SET features are successfully distinguished through the gate dependence of their dc responses at 4.2 K and through comparison with SET only devices, demonstrating controlled semiperiodic charge polarization in silicon IDQDs over a large gate range. Simulation of the observed SET-IDQD electronic response is quantitatively matched to the experiment, giving insight into the device coupling. A dynamic mechanism of charge sensing in the SET is proposed, supported by simulation. The controllable potential structure is suitable for quantum information processing.
ASJC Scopus subject areas
- Physics and Astronomy(all)