Increasing the spectral separation between the emission lines from individual CdSe quantum dots through annealing

T. C M Graham, X. Tang, K. A. Prior, B. C. Cavenett, R. J. Warburton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An annealing process has been applied during the growth of CdSe/ZnSe quantum dots (QDs). The annealing was able to spectrally separate the photoluminescence (PL) emission of two types of dots in the sample by as much as 160 meV. In a µ-PL study we found that the spectral separation between the emission peaks from individual QDs in the spectral region corresponding to the low energy ensemble PL feature had been significantly increased by the annealing. Despite not having directly affected the dot density, by defining a spectral window of 50 meV, based on the full-width at half-maximum (FWHM) of the ensemble PL of the normally grown sample, we have reduced the number of dots in the window from several thousand to approximately 10 making it possible to isolate the emission of single QDs for further study. © 2005 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)743-746
Number of pages4
JournalJournal of Crystal Growth
Volume278
Issue number1-4
DOIs
Publication statusPublished - 1 May 2005
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 22 Aug 200427 Aug 2004

Keywords

  • A1. Annealing
  • A1. Dot density
  • A1. Micro-photoluminescence
  • A1. Photoluminescence
  • A3. Quantum dots
  • B1. CdSe

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