Incorporation of carbon dioxide laser-grown oxide layers into conventional metal-oxide-silicon devices

The dielectric breakdown strength of CO₂ laser-grown oxides is measured and compared with other SiO₂ films grown by well-established techniques. For the first time, the successful application of laser technology with existing Integrated Circuit preparation techniques to manufacture simple Metal-Oxide-Silicon devices is reported. Optimum processing conditions for CO₂ laser oxidation of Si are described which eliminate such common laser-induced faults as slip dislocation and wafer warpage. The average field strength exhibited by the first capacitor to break down from several batches of 100 incorporating a laser-grown oxide layer was found to be 8.3 MV cm ^-1.