Abstract
The dielectric breakdown strength of CO2 laser-grown oxides is measured and compared with other SiO2 films grown by well-established techniques. For the first time, the successful application of laser technology with existing Integrated Circuit preparation techniques to manufacture simple Metal-Oxide-Silicon devices is reported. Optimum processing conditions for CO2 laser oxidation of Si are described which eliminate such common laser-induced faults as slip dislocation and wafer warpage. The average field strength exhibited by the first capacitor to break down from several batches of 100 incorporating a laser-grown oxide layer was found to be 8.3 MV cm -1.
Original language | English |
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Pages (from-to) | 3561-3565 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 54 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1983 |