Incorporation of carbon dioxide laser-grown oxide layers into conventional metal-oxide-silicon devices

I W Boyd

Research output: Contribution to journalArticle

Abstract

The dielectric breakdown strength of CO2 laser-grown oxides is measured and compared with other SiO2 films grown by well-established techniques. For the first time, the successful application of laser technology with existing Integrated Circuit preparation techniques to manufacture simple Metal-Oxide-Silicon devices is reported. Optimum processing conditions for CO2 laser oxidation of Si are described which eliminate such common laser-induced faults as slip dislocation and wafer warpage. The average field strength exhibited by the first capacitor to break down from several batches of 100 incorporating a laser-grown oxide layer was found to be 8.3 MV cm -1.

Original languageEnglish
Pages (from-to)3561-3565
Number of pages5
JournalJournal of Applied Physics
Volume54
Issue number6
DOIs
Publication statusPublished - 1983

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