In-well ambipolar diffusion in room-temperature InGaAsP multiple quantum wells

D Marshall, A Miller, C C Button

Research output: Contribution to journalArticle

Abstract

Three-pulse transient amplitude grating experiments were performed using picosecond pulses at 1.525 mu m on room-temperature InGaAsP multiple quantum wells using a PPLN optical parametric oscillator. An ambipolar diffusion coefficient of 7.2 cm(2)/s was measured from the diffraction efficiency decay rates. We deduce the presence of alloy scattering or an increase in interface scattering when comparing these results with those of similar experiments on GaAs-AlGaAs multiple quantum wells.

Original languageEnglish
Pages (from-to)1013-1015
Number of pages3
JournalIEEE Journal of Quantum Electronics
Volume36
Issue number9
DOIs
Publication statusPublished - Sep 2000

Keywords

  • diffusion processes
  • quantum wells
  • semiconductor materials measurement
  • FREE-CARRIER GRATINGS
  • SEMICONDUCTORS
  • RECOMBINATION
  • SUPERLATTICES
  • DIFFRACTION
  • MOBILITY

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