Three-pulse transient amplitude grating experiments were performed using picosecond pulses at 1.525 mu m on room-temperature InGaAsP multiple quantum wells using a PPLN optical parametric oscillator. An ambipolar diffusion coefficient of 7.2 cm(2)/s was measured from the diffraction efficiency decay rates. We deduce the presence of alloy scattering or an increase in interface scattering when comparing these results with those of similar experiments on GaAs-AlGaAs multiple quantum wells.
- diffusion processes
- quantum wells
- semiconductor materials measurement
- FREE-CARRIER GRATINGS