In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition

J H Baek, B Lee, W S Han, J M Smith

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)2707-2709
Number of pages3
JournalJapanese J Applied Physics 1
Volume38
Issue number5A
Publication statusPublished - 1999

Cite this

@article{8133fd0b21c04962ab71263e3a2eb453,
title = "In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition",
author = "Baek, {J H} and B Lee and Han, {W S} and Smith, {J M}",
year = "1999",
language = "English",
volume = "38",
pages = "2707--2709",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5A",

}

In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition. / Baek, J H; Lee, B; Han, W S; Smith, J M.

In: Japanese J Applied Physics 1, Vol. 38, No. 5A, 1999, p. 2707-2709.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition

AU - Baek, J H

AU - Lee, B

AU - Han, W S

AU - Smith, J M

PY - 1999

Y1 - 1999

M3 - Article

VL - 38

SP - 2707

EP - 2709

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 5A

ER -