In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition

J H Baek; B Lee; W S Han; J M Smith

In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition

J H Baek, B Lee, W S Han, J M Smith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	2707-2709
Number of pages	3
Journal	Japanese J Applied Physics 1
Volume	38
Issue number	5A
Publication status	Published - 1999

Cite this

@article{8133fd0b21c04962ab71263e3a2eb453,

title = "In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition",

author = "Baek, {J H} and B Lee and Han, {W S} and Smith, {J M}",

year = "1999",

language = "English",

volume = "38",

pages = "2707--2709",

journal = "Japanese J Applied Physics 1",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5A",

}

TY - JOUR

T1 - In-situ monitoring of In0.53A10.13Ga0.34As/In0.52A10.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition

AU - Baek, J H

AU - Lee, B

AU - Han, W S

AU - Smith, J M

PY - 1999

Y1 - 1999

M3 - Article

SN - 0021-4922

VL - 38

SP - 2707

EP - 2709

JO - Japanese J Applied Physics 1

JF - Japanese J Applied Physics 1

IS - 5A

ER -