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Impurity and Landau-level electron lifetimes in n-type GaAs
G. R. Allan
, A. Black
,
C. R. Pidgeon
, E. Gornik
, W. Seidenbusch
, P. Colter
School of Textiles & Design
School of Engineering & Physical Sciences
Research output
:
Contribution to journal
›
Article
›
peer-review
44
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Citations (Scopus)
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levels
100%
lifetime
100%
impurities
100%
electrons
100%
gallium arsenides
100%
lasers
60%
saturation
40%
cyclotron resonance
40%
carrier density
40%
carriers
40%
scattering
40%
cyclotrons
40%
absorption
20%
density
20%
comparative evaluations
20%
range
20%
emission
20%
power
20%
population inversion
20%
pumping
20%
line widths
20%
resonance absorption
20%
Earth and Planetary Sciences
Cyclotron Resonance
100%
Density Dependence
100%
Absorption
100%
High Power Lasers
50%
Population Inversion
50%
Emissions
50%
Infrared Laser
50%
Engineering
Gallium Arsenide
100%
Electron Lifetime
100%
Cyclotron Resonance
50%
Carrier Concentration
50%
Emission Measurement
25%
Level Model
25%
Absorption Measurement
25%
Laser Intensity
25%
Far-Infrared Laser
25%
Population Inversion
25%
Physics
Density Dependence
100%
Cyclotron Resonance
100%
Linewidth
50%
Infrared Laser
50%
High Power Lasers
50%
Population Inversion
50%
Chemistry
Impurity Level
100%
Landau Level
100%
Gaas
100%
Cyclotron Resonance
50%
Linewidth
25%
Laser Technique
25%
Material Science
Gallium Arsenide
100%
Carrier Concentration
50%
Laser Technique
25%
Density
25%
Linewidth
25%