Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation

D. J. Goodwill; A. C. Walker; C. R. Stanley; M. C. Holland; M. McElhinney

doi:10.1063/1.110886

Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation

D. J. Goodwill, A. C. Walker, C. R. Stanley, M. C. Holland, M. McElhinney

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We demonstrate a self-electro-optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain-balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13-V reverse bias, and have found 99% photodetection quantum efficiency under the built-in junction field. Bistability in a resistor-SEED configuration is demonstrated.

Original language	English
Pages (from-to)	1192-1194
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	10
DOIs	https://doi.org/10.1063/1.110886
Publication status	Published - 1994

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10.1063/1.110886

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@article{a1ad2cbf878c4a2e9fb7ca7aaf6a470b,

title = "Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation",

abstract = "We demonstrate a self-electro-optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain-balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13-V reverse bias, and have found 99% photodetection quantum efficiency under the built-in junction field. Bistability in a resistor-SEED configuration is demonstrated.",

author = "Goodwill, {D. J.} and Walker, {A. C.} and Stanley, {C. R.} and Holland, {M. C.} and M. McElhinney",

year = "1994",

doi = "10.1063/1.110886",

language = "English",

volume = "64",

pages = "1192--1194",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation

AU - Goodwill, D. J.

AU - Walker, A. C.

AU - Stanley, C. R.

AU - Holland, M. C.

AU - McElhinney, M.

PY - 1994

Y1 - 1994

N2 - We demonstrate a self-electro-optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain-balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13-V reverse bias, and have found 99% photodetection quantum efficiency under the built-in junction field. Bistability in a resistor-SEED configuration is demonstrated.

AB - We demonstrate a self-electro-optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain-balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13-V reverse bias, and have found 99% photodetection quantum efficiency under the built-in junction field. Bistability in a resistor-SEED configuration is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0028767279&partnerID=8YFLogxK

U2 - 10.1063/1.110886

DO - 10.1063/1.110886

M3 - Article

VL - 64

SP - 1192

EP - 1194

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation

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