Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation

D. J. Goodwill, A. C. Walker, C. R. Stanley, M. C. Holland, M. McElhinney

Research output: Contribution to journalArticle

Abstract

We demonstrate a self-electro-optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain-balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13-V reverse bias, and have found 99% photodetection quantum efficiency under the built-in junction field. Bistability in a resistor-SEED configuration is demonstrated.

Original languageEnglish
Pages (from-to)1192-1194
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number10
DOIs
Publication statusPublished - 1994

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