Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature

R. E. Warburton, M. A. Itzler, G. S. Buller

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Room-temperature operation of InGaAs/InP single-photon avalanche diode detectors operating in free-running mode, with no electrical gating, is demonstrated. An improved design of device structure permitted significantly lower dark count rates than previously reported. Free-running operation at room temperature using an incident wavelength of 1550nm gave a noise equivalent power of 1.5×10-15 WHz-1/2 with improved photon timing jitter. © The Institution of Engineering and Technology 2009.

Original languageEnglish
Pages (from-to)996-997
Number of pages2
JournalElectronics Letters
Volume45
Issue number19
DOIs
Publication statusPublished - 2009

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