Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature

R. E. Warburton; M. A. Itzler; G. S. Buller

doi:10.1049/el.2009.1508

Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature

R. E. Warburton, M. A. Itzler, G. S. Buller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Room-temperature operation of InGaAs/InP single-photon avalanche diode detectors operating in free-running mode, with no electrical gating, is demonstrated. An improved design of device structure permitted significantly lower dark count rates than previously reported. Free-running operation at room temperature using an incident wavelength of 1550nm gave a noise equivalent power of 1.5×10^-15 WHz^-1/2 with improved photon timing jitter. © The Institution of Engineering and Technology 2009.

Original language	English
Pages (from-to)	996-997
Number of pages	2
Journal	Electronics Letters
Volume	45
Issue number	19
DOIs	https://doi.org/10.1049/el.2009.1508
Publication status	Published - 2009

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10.1049/el.2009.1508

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@article{fc2b8c6f964b4379aebdab91b367d3e5,

title = "Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature",

abstract = "Room-temperature operation of InGaAs/InP single-photon avalanche diode detectors operating in free-running mode, with no electrical gating, is demonstrated. An improved design of device structure permitted significantly lower dark count rates than previously reported. Free-running operation at room temperature using an incident wavelength of 1550nm gave a noise equivalent power of 1.5×10-15 WHz-1/2 with improved photon timing jitter. {\textcopyright} The Institution of Engineering and Technology 2009.",

author = "Warburton, {R. E.} and Itzler, {M. A.} and Buller, {G. S.}",

year = "2009",

doi = "10.1049/el.2009.1508",

language = "English",

volume = "45",

pages = "996--997",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "19",

}

TY - JOUR

T1 - Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature

AU - Warburton, R. E.

AU - Itzler, M. A.

AU - Buller, G. S.

PY - 2009

Y1 - 2009

N2 - Room-temperature operation of InGaAs/InP single-photon avalanche diode detectors operating in free-running mode, with no electrical gating, is demonstrated. An improved design of device structure permitted significantly lower dark count rates than previously reported. Free-running operation at room temperature using an incident wavelength of 1550nm gave a noise equivalent power of 1.5×10-15 WHz-1/2 with improved photon timing jitter. © The Institution of Engineering and Technology 2009.

AB - Room-temperature operation of InGaAs/InP single-photon avalanche diode detectors operating in free-running mode, with no electrical gating, is demonstrated. An improved design of device structure permitted significantly lower dark count rates than previously reported. Free-running operation at room temperature using an incident wavelength of 1550nm gave a noise equivalent power of 1.5×10-15 WHz-1/2 with improved photon timing jitter. © The Institution of Engineering and Technology 2009.

UR - http://www.scopus.com/inward/record.url?scp=70249085188&partnerID=8YFLogxK

U2 - 10.1049/el.2009.1508

DO - 10.1049/el.2009.1508

M3 - Article

SN - 0013-5194

VL - 45

SP - 996

EP - 997

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature

Abstract

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