II-VI quantum confined Stark effect waveguide modulators

P. J. Thompson; S. Y. Wang; G. Horsburgh; T. A. Steele; K. A. Prior; B. C. Cavenett

doi:10.1063/1.116107

II-VI quantum confined Stark effect waveguide modulators

P. J. Thompson, S. Y. Wang, G. Horsburgh, T. A. Steele, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. © 1996 American Institute of Physics.

Original language	English
Pages (from-to)	946-948
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	7
DOIs	https://doi.org/10.1063/1.116107
Publication status	Published - 12 Feb 1996

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title = "II-VI quantum confined Stark effect waveguide modulators",

abstract = "Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. {\textcopyright} 1996 American Institute of Physics.",

author = "Thompson, {P. J.} and Wang, {S. Y.} and G. Horsburgh and Steele, {T. A.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1996",

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T1 - II-VI quantum confined Stark effect waveguide modulators

AU - Thompson, P. J.

AU - Wang, S. Y.

AU - Horsburgh, G.

AU - Steele, T. A.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2/12

Y1 - 1996/2/12

N2 - Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. © 1996 American Institute of Physics.

AB - Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. © 1996 American Institute of Physics.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

II-VI quantum confined Stark effect waveguide modulators

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