Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.
|Journal||IEE Colloquium (Digest)|
|Publication status||Published - 1 Jan 1994|
|Event||Power Division Colloquium on Devices, Drive Circuits and Protection - London, UK|
Duration: 25 Apr 1994 → 25 Apr 1994