IGBT turn-off characteristics and high frequency application

S. J. Finney; B. W. Williams; T. C. Green

IGBT turn-off characteristics and high frequency application

S. J. Finney, B. W. Williams, T. C. Green

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.

Original language	English
Pages (from-to)	5/1-5/4
Journal	IEE Colloquium (Digest)
Issue number	104
Publication status	Published - 1 Jan 1994
Event	Power Division Colloquium on Devices, Drive Circuits and Protection - London, UK Duration: 25 Apr 1994 → 25 Apr 1994

Cite this

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title = "IGBT turn-off characteristics and high frequency application",

abstract = "Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.",

author = "Finney, {S. J.} and Williams, {B. W.} and Green, {T. C.}",

year = "1994",

month = jan,

day = "1",

language = "English",

pages = "5/1--5/4",

journal = "IEE Colloquium (Digest)",

publisher = "Institute of Electrical Engineers",

number = "104",

note = "Power Division Colloquium on Devices, Drive Circuits and Protection ; Conference date: 25-04-1994 Through 25-04-1994",

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TY - JOUR

T1 - IGBT turn-off characteristics and high frequency application

AU - Finney, S. J.

AU - Williams, B. W.

AU - Green, T. C.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.

AB - Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=0028408530&partnerID=8YFLogxK

M3 - Article

SP - 5/1-5/4

JO - IEE Colloquium (Digest)

JF - IEE Colloquium (Digest)

IS - 104

T2 - Power Division Colloquium on Devices, Drive Circuits and Protection

Y2 - 25 April 1994 through 25 April 1994

ER -

IGBT turn-off characteristics and high frequency application

Abstract

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