IGBT turn-off characteristics and high frequency application

S. J. Finney, B. W. Williams, T. C. Green

Research output: Contribution to journalArticle

Abstract

Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.

Original languageEnglish
Pages (from-to)5/1-5/4
JournalIEE Colloquium (Digest)
Issue number104
Publication statusPublished - 1 Jan 1994
EventPower Division Colloquium on Devices, Drive Circuits and Protection - London, UK
Duration: 25 Apr 199425 Apr 1994

Fingerprint

Insulated gate bipolar transistors (IGBT)
Switching frequency
Composite materials

Cite this

Finney, S. J., Williams, B. W., & Green, T. C. (1994). IGBT turn-off characteristics and high frequency application. IEE Colloquium (Digest), (104), 5/1-5/4.
Finney, S. J. ; Williams, B. W. ; Green, T. C. / IGBT turn-off characteristics and high frequency application. In: IEE Colloquium (Digest). 1994 ; No. 104. pp. 5/1-5/4.
@article{f833077cbf7f4a4b93bb34d3d246f3b8,
title = "IGBT turn-off characteristics and high frequency application",
abstract = "Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.",
author = "Finney, {S. J.} and Williams, {B. W.} and Green, {T. C.}",
year = "1994",
month = "1",
day = "1",
language = "English",
pages = "5/1--5/4",
journal = "IEE Colloquium (Digest)",
issn = "0963-3308",
publisher = "Institute of Electrical Engineers",
number = "104",

}

Finney, SJ, Williams, BW & Green, TC 1994, 'IGBT turn-off characteristics and high frequency application', IEE Colloquium (Digest), no. 104, pp. 5/1-5/4.

IGBT turn-off characteristics and high frequency application. / Finney, S. J.; Williams, B. W.; Green, T. C.

In: IEE Colloquium (Digest), No. 104, 01.01.1994, p. 5/1-5/4.

Research output: Contribution to journalArticle

TY - JOUR

T1 - IGBT turn-off characteristics and high frequency application

AU - Finney, S. J.

AU - Williams, B. W.

AU - Green, T. C.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.

AB - Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=0028408530&partnerID=8YFLogxK

M3 - Article

SP - 5/1-5/4

JO - IEE Colloquium (Digest)

JF - IEE Colloquium (Digest)

SN - 0963-3308

IS - 104

ER -

Finney SJ, Williams BW, Green TC. IGBT turn-off characteristics and high frequency application. IEE Colloquium (Digest). 1994 Jan 1;(104):5/1-5/4.