IGBT turn-off characteristics and high frequency application

S. J. Finney, B. W. Williams, T. C. Green

Research output: Contribution to journalArticle

Abstract

Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.

Original languageEnglish
Pages (from-to)5/1-5/4
JournalIEE Colloquium (Digest)
Issue number104
Publication statusPublished - 1 Jan 1994
EventPower Division Colloquium on Devices, Drive Circuits and Protection - London, UK
Duration: 25 Apr 199425 Apr 1994

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  • Cite this

    Finney, S. J., Williams, B. W., & Green, T. C. (1994). IGBT turn-off characteristics and high frequency application. IEE Colloquium (Digest), (104), 5/1-5/4.