Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

Edwin Acosta, Neil Wight, V. Smirnov, Jim Buckman, Nick Bennett

Research output: Contribution to journalArticle

Abstract

Thermoelectric technology has not yet been able to reach full-scale market
penetration partly because most commercial materials employed are scarce/-
costly, environmentally unfriendly and in addition provide low conversion
efficiency. The necessity to tackle some of these hurdles leads us to investigate
the suitability of n-type hydrogenated microcrystalline silicon (lc-Si: H) in the
fabrication of thermoelectric devices, produced by plasma enhanced chemical
vapour deposition (PECVD), which is a mature process of proven scalability.
This study reports an approach to optimise the thermoelectric power factor
(PF) by varying the dopant concentration by means of post-annealing without
impacting film morphology, at least for temperatures below 550C. Results
show an improvement in PF of more than 80%, which is driven by a noticeable
increase of carrier mobility and Seebeck coefficient in spite of a reduction in
carrier concentration. A PF of 2.08 9 104 W/mK2 at room temperature is
reported for n-type films of 1 lm thickness, which is in line with the best
values reported in recent literature for similar structures.
LanguageEnglish
Pages1-8
JournalJournal of Electronic Materials
Early online date30 Nov 2017
DOIs
Publication statusE-pub ahead of print - 30 Nov 2017

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silicon
thin films
Seebeck effect
carrier mobility
annealing
room temperature
coefficients
temperature

Cite this

Acosta, Edwin ; Wight, Neil ; Smirnov, V. ; Buckman, Jim ; Bennett, Nick. / Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics. In: Journal of Electronic Materials. 2017 ; pp. 1-8.
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abstract = "Thermoelectric technology has not yet been able to reach full-scale marketpenetration partly because most commercial materials employed are scarce/-costly, environmentally unfriendly and in addition provide low conversionefficiency. The necessity to tackle some of these hurdles leads us to investigatethe suitability of n-type hydrogenated microcrystalline silicon (lc-Si: H) in thefabrication of thermoelectric devices, produced by plasma enhanced chemicalvapour deposition (PECVD), which is a mature process of proven scalability.This study reports an approach to optimise the thermoelectric power factor(PF) by varying the dopant concentration by means of post-annealing withoutimpacting film morphology, at least for temperatures below 550C. Resultsshow an improvement in PF of more than 80{\%}, which is driven by a noticeableincrease of carrier mobility and Seebeck coefficient in spite of a reduction incarrier concentration. A PF of 2.08 9 104 W/mK2 at room temperature isreported for n-type films of 1 lm thickness, which is in line with the bestvalues reported in recent literature for similar structures.",
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Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics. / Acosta, Edwin; Wight, Neil; Smirnov, V.; Buckman, Jim; Bennett, Nick.

In: Journal of Electronic Materials, 30.11.2017, p. 1-8.

Research output: Contribution to journalArticle

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AU - Acosta, Edwin

AU - Wight, Neil

AU - Smirnov, V.

AU - Buckman, Jim

AU - Bennett, Nick

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