Hydrogen plasma etching of diamond films deposited on graphite

I. Villalpando; P. John; S. Porro; J. I B Wilson

doi:10.1016/j.diamond.2011.03.007

Hydrogen plasma etching of diamond films deposited on graphite

I. Villalpando, P. John, S. Porro, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x%CH₄/15%H₂/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp³/sp² ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow. © 2011 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	711-716
Number of pages	6
Journal	Diamond and Related Materials
Volume	20
Issue number	5-6
DOIs	https://doi.org/10.1016/j.diamond.2011.03.007
Publication status	Published - May 2011

Keywords

CVD diamond
Diamond etching
Diamond on graphite
Hydrogen plasma erosion
Raman spectroscopy
XPS

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10.1016/j.diamond.2011.03.007

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title = "Hydrogen plasma etching of diamond films deposited on graphite",

abstract = "Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x\%CH4/15\%H2/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp3/sp2 ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow. {\textcopyright} 2011 Elsevier B.V. All rights reserved.",

keywords = "CVD diamond, Diamond etching, Diamond on graphite, Hydrogen plasma erosion, Raman spectroscopy, XPS",

author = "I. Villalpando and P. John and S. Porro and Wilson, \{J. I B\}",

year = "2011",

month = may,

doi = "10.1016/j.diamond.2011.03.007",

language = "English",

volume = "20",

pages = "711--716",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Hydrogen plasma etching of diamond films deposited on graphite

AU - Villalpando, I.

AU - John, P.

AU - Porro, S.

AU - Wilson, J. I B

PY - 2011/5

Y1 - 2011/5

N2 - Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x%CH4/15%H2/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp3/sp2 ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow. © 2011 Elsevier B.V. All rights reserved.

AB - Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x%CH4/15%H2/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp3/sp2 ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow. © 2011 Elsevier B.V. All rights reserved.

KW - CVD diamond

KW - Diamond etching

KW - Diamond on graphite

KW - Hydrogen plasma erosion

KW - Raman spectroscopy

KW - XPS

U2 - 10.1016/j.diamond.2011.03.007

DO - 10.1016/j.diamond.2011.03.007

M3 - Article

SN - 0925-9635

VL - 20

SP - 711

EP - 716

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 5-6

ER -

Hydrogen plasma etching of diamond films deposited on graphite

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Keywords

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