Abstract
Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x%CH4/15%H2/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp3/sp2 ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow. © 2011 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 711-716 |
Number of pages | 6 |
Journal | Diamond and Related Materials |
Volume | 20 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - May 2011 |
Keywords
- CVD diamond
- Diamond etching
- Diamond on graphite
- Hydrogen plasma erosion
- Raman spectroscopy
- XPS