Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures

M. Helm; E. Gornik; A. Black; G. R. Allan; C. R. Pidgeon; K. Mitchell; G. Weimann

Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures

M. Helm, E. Gornik, A. Black, G. R. Allan, C. R. Pidgeon, K. Mitchell, G. Weimann

Research output: Contribution to journal › Article › peer-review

Abstract

We report the first measurement of inter-Landau level lifetimes in GaAs/GaAlAs-heterostructures. Saturation cyclotron resonance has been measured using a high intensity optically pumped far infrared laser. The results are analyzed on the basis of a three level model. The obtained lifetimes vary from 0.18 to 1.2 ns for samples with different carrier concentration. © 1985.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Physica B and C
Volume	134
Issue number	1-3
Publication status	Published - Nov 1985

Cite this

@article{be44c88c8a3c4ccf8f19467d9dbf2976,

title = "Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures",

abstract = "We report the first measurement of inter-Landau level lifetimes in GaAs/GaAlAs-heterostructures. Saturation cyclotron resonance has been measured using a high intensity optically pumped far infrared laser. The results are analyzed on the basis of a three level model. The obtained lifetimes vary from 0.18 to 1.2 ns for samples with different carrier concentration. {\textcopyright} 1985.",

author = "M. Helm and E. Gornik and A. Black and Allan, \{G. R.\} and Pidgeon, \{C. R.\} and K. Mitchell and G. Weimann",

year = "1985",

month = nov,

language = "English",

volume = "134",

pages = "323--326",

journal = "Physica B and C",

issn = "0378-4363",

publisher = "North-Holland Publ Co",

number = "1-3",

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TY - JOUR

T1 - Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures

AU - Helm, M.

AU - Gornik, E.

AU - Black, A.

AU - Allan, G. R.

AU - Pidgeon, C. R.

AU - Mitchell, K.

AU - Weimann, G.

PY - 1985/11

Y1 - 1985/11

N2 - We report the first measurement of inter-Landau level lifetimes in GaAs/GaAlAs-heterostructures. Saturation cyclotron resonance has been measured using a high intensity optically pumped far infrared laser. The results are analyzed on the basis of a three level model. The obtained lifetimes vary from 0.18 to 1.2 ns for samples with different carrier concentration. © 1985.

AB - We report the first measurement of inter-Landau level lifetimes in GaAs/GaAlAs-heterostructures. Saturation cyclotron resonance has been measured using a high intensity optically pumped far infrared laser. The results are analyzed on the basis of a three level model. The obtained lifetimes vary from 0.18 to 1.2 ns for samples with different carrier concentration. © 1985.

UR - https://www.scopus.com/pages/publications/0022150534

M3 - Article

SN - 0378-4363

VL - 134

SP - 323

EP - 326

JO - Physica B and C

JF - Physica B and C

IS - 1-3

ER -

Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures

Abstract

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