We report the first measurement of inter-Landau level lifetimes in GaAs/GaAlAs-heterostructures. Saturation cyclotron resonance has been measured using a high intensity optically pumped far infrared laser. The results are analyzed on the basis of a three level model. The obtained lifetimes vary from 0.18 to 1.2 ns for samples with different carrier concentration. © 1985.
|Number of pages||4|
|Journal||Physica B and C|
|Publication status||Published - Nov 1985|