Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures

M. Helm, E. Gornik, A. Black, G. R. Allan, C. R. Pidgeon, K. Mitchell, G. Weimann

Research output: Contribution to journalArticle

Abstract

We report the first measurement of inter-Landau level lifetimes in GaAs/GaAlAs-heterostructures. Saturation cyclotron resonance has been measured using a high intensity optically pumped far infrared laser. The results are analyzed on the basis of a three level model. The obtained lifetimes vary from 0.18 to 1.2 ns for samples with different carrier concentration. © 1985.

Original languageEnglish
Pages (from-to)323-326
Number of pages4
JournalPhysica B and C
Volume134
Issue number1-3
Publication statusPublished - Nov 1985

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    Helm, M., Gornik, E., Black, A., Allan, G. R., Pidgeon, C. R., Mitchell, K., & Weimann, G. (1985). Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures. Physica B and C, 134(1-3), 323-326.