Hole recapture limited single photon generation from a single n -type charge-tunable quantum dot

P. A. Dalgarno, J. McFarlane, D. Brunner, R. W. Lambert, B. D. Gerardot, R. J. Warburton, K. Karrai, A. Badolato, P. M. Petroff

Research output: Contribution to journalArticle

Abstract

The complete control of the electron occupation of a single InGaAs dot is shown to produce highly antibunched single photon emission with nonresonant optical excitation. Intensity correlation measurements show g(2) (0) values of 3% (50%) at low (high) excitation power. A distinct double peak structure is shown at time zero, demonstrating that although two photons may be emitted per excitation pulse, they are not simultaneously emitted. We interpret this feature as a hole recapture process from the wetting layer into the dot after initial recombination. The recapture dynamics is shown to be adjustable through engineering the valence potential. © 2008 American Institute of Physics.

Original languageEnglish
Article number193103
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number19
DOIs
Publication statusPublished - 12 May 2008

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quantum dots
photons
excitation
occupation
wetting
engineering
valence
physics
pulses
electrons

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Dalgarno, P. A. ; McFarlane, J. ; Brunner, D. ; Lambert, R. W. ; Gerardot, B. D. ; Warburton, R. J. ; Karrai, K. ; Badolato, A. ; Petroff, P. M. / Hole recapture limited single photon generation from a single n -type charge-tunable quantum dot. In: Applied Physics Letters. 2008 ; Vol. 92, No. 19. pp. -.
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abstract = "The complete control of the electron occupation of a single InGaAs dot is shown to produce highly antibunched single photon emission with nonresonant optical excitation. Intensity correlation measurements show g(2) (0) values of 3{\%} (50{\%}) at low (high) excitation power. A distinct double peak structure is shown at time zero, demonstrating that although two photons may be emitted per excitation pulse, they are not simultaneously emitted. We interpret this feature as a hole recapture process from the wetting layer into the dot after initial recombination. The recapture dynamics is shown to be adjustable through engineering the valence potential. {\circledC} 2008 American Institute of Physics.",
author = "Dalgarno, {P. A.} and J. McFarlane and D. Brunner and Lambert, {R. W.} and Gerardot, {B. D.} and Warburton, {R. J.} and K. Karrai and A. Badolato and Petroff, {P. M.}",
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Dalgarno, PA, McFarlane, J, Brunner, D, Lambert, RW, Gerardot, BD, Warburton, RJ, Karrai, K, Badolato, A & Petroff, PM 2008, 'Hole recapture limited single photon generation from a single n -type charge-tunable quantum dot', Applied Physics Letters, vol. 92, no. 19, 193103, pp. -. https://doi.org/10.1063/1.2924315

Hole recapture limited single photon generation from a single n -type charge-tunable quantum dot. / Dalgarno, P. A.; McFarlane, J.; Brunner, D.; Lambert, R. W.; Gerardot, B. D.; Warburton, R. J.; Karrai, K.; Badolato, A.; Petroff, P. M.

In: Applied Physics Letters, Vol. 92, No. 19, 193103, 12.05.2008, p. -.

Research output: Contribution to journalArticle

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T1 - Hole recapture limited single photon generation from a single n -type charge-tunable quantum dot

AU - Dalgarno, P. A.

AU - McFarlane, J.

AU - Brunner, D.

AU - Lambert, R. W.

AU - Gerardot, B. D.

AU - Warburton, R. J.

AU - Karrai, K.

AU - Badolato, A.

AU - Petroff, P. M.

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