Hole recapture limited single photon generation from a single n -type charge-tunable quantum dot

P. A. Dalgarno, J. McFarlane, D. Brunner, R. W. Lambert, B. D. Gerardot, R. J. Warburton, K. Karrai, A. Badolato, P. M. Petroff

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Abstract

The complete control of the electron occupation of a single InGaAs dot is shown to produce highly antibunched single photon emission with nonresonant optical excitation. Intensity correlation measurements show g(2) (0) values of 3% (50%) at low (high) excitation power. A distinct double peak structure is shown at time zero, demonstrating that although two photons may be emitted per excitation pulse, they are not simultaneously emitted. We interpret this feature as a hole recapture process from the wetting layer into the dot after initial recombination. The recapture dynamics is shown to be adjustable through engineering the valence potential. © 2008 American Institute of Physics.

Original languageEnglish
Article number193103
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number19
DOIs
Publication statusPublished - 12 May 2008

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    Dalgarno, P. A., McFarlane, J., Brunner, D., Lambert, R. W., Gerardot, B. D., Warburton, R. J., Karrai, K., Badolato, A., & Petroff, P. M. (2008). Hole recapture limited single photon generation from a single n -type charge-tunable quantum dot. Applied Physics Letters, 92(19), -. [193103]. https://doi.org/10.1063/1.2924315