TY - JOUR
T1 - Highly efficient THz four-wave mixing in doped silicon
AU - Dessmann, Nils
AU - Le, Nguyen H.
AU - Eless, Viktoria
AU - Chick, Steven
AU - Saeedi, Kamyar
AU - Perez-Delgado, Alberto
AU - Pavlov, Sergey G.
AU - van der Meer, Alexander F. G.
AU - Litvinenko, Konstantin L.
AU - Galbraith, Ian
AU - Abrosimov, Nikolay V.
AU - Riemann, Helge
AU - Pidgeon, Carl R.
AU - Aeppli, Gabriel
AU - Redlich, Britta
AU - Murdin, Benedict N.
N1 - Funding Information:
We acknowledge financial support from the UK Engineering and Physical Sciences Research Council [ADDRFSS, Grant No. EP/M009564/1], the EPSRC National Research Facility, FELIX, and the skilful support of the FELIX staff.
Publisher Copyright:
© 2021, The Author(s).
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/4/1
Y1 - 2021/4/1
N2 - Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.
AB - Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.
UR - http://www.scopus.com/inward/record.url?scp=85103838162&partnerID=8YFLogxK
U2 - 10.1038/s41377-021-00509-6
DO - 10.1038/s41377-021-00509-6
M3 - Article
C2 - 33795642
SN - 2047-7538
VL - 10
JO - Light: Science and Applications
JF - Light: Science and Applications
M1 - 71
ER -