Highly conductive Sb-doped layers in strained Si

Nick S Bennett, Nick E. B Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O'Reilly, P. J. McNally, G. Cooke, Hamid Kheyrandish

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, similar to 10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices. (c) 2006 American Institute of Physics.

Original languageEnglish
Article number182122
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 30 Oct 2006




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