Highly conductive Sb-doped layers in strained Si

Nick S Bennett, Nick E. B Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O'Reilly, P. J. McNally, G. Cooke, Hamid Kheyrandish

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, similar to 10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices. (c) 2006 American Institute of Physics.

Original languageEnglish
Article number182122
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - 30 Oct 2006

Keywords

  • SILICON
  • DIFFUSION
  • JUNCTIONS
  • MOBILITY

Cite this

Bennett, N. S., Cowern, N. E. B., Smith, A. J., Gwilliam, R. M., Sealy, B. J., O'Reilly, L., McNally, P. J., Cooke, G., & Kheyrandish, H. (2006). Highly conductive Sb-doped layers in strained Si. Applied Physics Letters, 89(18), [182122]. https://doi.org/10.1063/1.2382741