High sensitivity Ge-on-Si single-photon avalanche diode detectors

Lourdes Ferre Llin, Jarosław Kirdoda, Fiona Thorburn, Laura L. Huddleston, Zoë M. Greener, Kateryna Kuzmenko, Peter Vines, Derek C. S. Dumas, Ross W. Millar, Gerald S. Buller, Douglas J. Paul

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26 µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7 × 10−17 WHz− 12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134 ± 10 ps are demonstrated.

Original languageEnglish
Pages (from-to)6406-6409
Number of pages4
JournalChinese Optics Letters
Volume45
Issue number23
Early online date24 Nov 2020
DOIs
Publication statusPublished - 1 Dec 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High sensitivity Ge-on-Si single-photon avalanche diode detectors'. Together they form a unique fingerprint.

Cite this