High sensitivity Ge-on-Si single-photon avalanche diode detectors

Lourdes Ferre Llin; Jarosław Kirdoda; Fiona Thorburn; Laura L. Huddleston; Zoë M. Greener; Kateryna Kuzmenko; Peter Vines; Derek C. S. Dumas; Ross W. Millar; Gerald S. Buller; Douglas J. Paul

doi:10.1364/OL.396756

High sensitivity Ge-on-Si single-photon avalanche diode detectors

Lourdes Ferre Llin, Jarosław Kirdoda, Fiona Thorburn, Laura L. Huddleston, Zoë M. Greener, Kateryna Kuzmenko, Peter Vines, Derek C. S. Dumas, Ross W. Millar, Gerald S. Buller, Douglas J. Paul

Research output: Contribution to journal › Article › peer-review

Abstract

The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26 µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7 × 10⁻¹⁷ WHz^{− 12} compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134 ± 10 ps are demonstrated.

Original language	English
Pages (from-to)	6406-6409
Number of pages	4
Journal	Chinese Optics Letters
Volume	45
Issue number	23
Early online date	24 Nov 2020
DOIs	https://doi.org/10.1364/OL.396756
Publication status	Published - 1 Dec 2020

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1364/OL.396756

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title = "High sensitivity Ge-on-Si single-photon avalanche diode detectors",

abstract = "The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26 µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7 × 10−17 WHz− 12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134 ± 10 ps are demonstrated.",

author = "Llin, {Lourdes Ferre} and Jaros{\l}aw Kirdoda and Fiona Thorburn and Huddleston, {Laura L.} and Greener, {Zo{\"e} M.} and Kateryna Kuzmenko and Peter Vines and Dumas, {Derek C. S.} and Millar, {Ross W.} and Buller, {Gerald S.} and Paul, {Douglas J.}",

year = "2020",

month = dec,

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doi = "10.1364/OL.396756",

language = "English",

volume = "45",

pages = "6406--6409",

journal = "Chinese Optics Letters",

issn = "1671-7694",

publisher = "Science Press",

number = "23",

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High sensitivity Ge-on-Si single-photon avalanche diode detectors. / Llin, Lourdes Ferre; Kirdoda, Jarosław; Thorburn, Fiona; Huddleston, Laura L.; Greener, Zoë M.; Kuzmenko, Kateryna; Vines, Peter; Dumas, Derek C. S.; Millar, Ross W.; Buller, Gerald S.; Paul, Douglas J.

In: Chinese Optics Letters, Vol. 45, No. 23, 01.12.2020, p. 6406-6409.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High sensitivity Ge-on-Si single-photon avalanche diode detectors

AU - Llin, Lourdes Ferre

AU - Kirdoda, Jarosław

AU - Thorburn, Fiona

AU - Huddleston, Laura L.

AU - Greener, Zoë M.

AU - Kuzmenko, Kateryna

AU - Vines, Peter

AU - Dumas, Derek C. S.

AU - Millar, Ross W.

AU - Buller, Gerald S.

AU - Paul, Douglas J.

PY - 2020/12/1

Y1 - 2020/12/1

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AB - The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26 µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7 × 10−17 WHz− 12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134 ± 10 ps are demonstrated.

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