High-resolution subsurface microscopy of CMOS integrated circuits using radially polarized light

Marius Rutkauskas, Carl Farrell, C. Dorrer, K. L. Marshall, Theodore R Lundquist, Praveen Vedagarbha, Derryck Telford Reid

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Under high numerical aperture (NA) conditions, a linearly polarized plane wave focuses to a spot that is extended along the E-field vector, but radially polarized light is predicted to form a circular spot whose diameter equals the narrower dimension obtained with linear polarization. This effect provides an opportunity for improved resolution in high-NA microscopy, and here we present a performance study of subsurface two-photon optical-beam-induced current solid-immersion-lens microscopy of a complementary metal-oxide semiconductor integrated circuit, showing a resolution improvement by using radially polarized illumination. By comparing images of the same structural features we show that radial polarization achieves a resolution of 126 nm, while linear polarization achieves resolutions of 122 and 165 nm, depending on the E-field orientation. These results are consistent with the theoretically expected behavior and are supported by high-resolution images which show superior feature definition using radial polarization.

Original languageEnglish
Pages (from-to)5502-5505
Number of pages4
JournalOptics Letters
Volume40
Issue number23
DOIs
Publication statusPublished - 1 Dec 2015

Keywords

  • BEAM
  • GENERATION
  • LASERS

Cite this

Rutkauskas, M., Farrell, C., Dorrer, C., Marshall, K. L., Lundquist, T. R., Vedagarbha, P., & Reid, D. T. (2015). High-resolution subsurface microscopy of CMOS integrated circuits using radially polarized light. Optics Letters, 40(23), 5502-5505. https://doi.org/10.1364/OL.40.005502