High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light

Marius Rutkauskas; C. Farrell; C. Dorrer; K. L. Marshall; T. R. Lundquist; P. Vedagarbha; D. T. Reid

doi:10.1364/CLEO_SI.2015.STh1H.7

High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light

Marius Rutkauskas, C. Farrell, C. Dorrer, K. L. Marshall, T. R. Lundquist, P. Vedagarbha, D. T. Reid

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Comparison of high-resolution sub-surface microscopy shows that illumination with linear polarization resolves an edge with resolutions of 95 nm and 120 nm, depending on E-field orientation, while radial polarization achieves a resolution of 98 nm.

Original language	English
Title of host publication	CLEO: Science and Innovations, CLEO-SI 2015
Publisher	OSA Publishing
ISBN (Print)	978-1-55752-968-8
DOIs	https://doi.org/10.1364/CLEO_SI.2015.STh1H.7
Publication status	Published - 2015
Event	CLEO: Science and Innovations 2015 - San Jose, United States Duration: 10 May 2015 → 15 May 2015

Conference

Conference	CLEO: Science and Innovations 2015
Abbreviated title	CLEO-SI 2015
Country/Territory	United States
City	San Jose
Period	10/05/15 → 15/05/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

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10.1364/CLEO_SI.2015.STh1H.7

Cite this

@inproceedings{aad536937eba46189fad87135ebcc135,

title = "High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light",

abstract = "Comparison of high-resolution sub-surface microscopy shows that illumination with linear polarization resolves an edge with resolutions of 95 nm and 120 nm, depending on E-field orientation, while radial polarization achieves a resolution of 98 nm.",

author = "Marius Rutkauskas and C. Farrell and C. Dorrer and Marshall, {K. L.} and Lundquist, {T. R.} and P. Vedagarbha and Reid, {D. T.}",

year = "2015",

doi = "10.1364/CLEO_SI.2015.STh1H.7",

language = "English",

isbn = "978-1-55752-968-8",

booktitle = "CLEO: Science and Innovations, CLEO-SI 2015",

publisher = "OSA Publishing",

address = "United States",

note = "CLEO: Science and Innovations 2015, CLEO-SI 2015 ; Conference date: 10-05-2015 Through 15-05-2015",

}

Rutkauskas, M, Farrell, C, Dorrer, C, Marshall, KL, Lundquist, TR, Vedagarbha, P & Reid, DT 2015, High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light. in CLEO: Science and Innovations, CLEO-SI 2015. OSA Publishing, CLEO: Science and Innovations 2015, San Jose, United States, 10/05/15. https://doi.org/10.1364/CLEO_SI.2015.STh1H.7

TY - GEN

T1 - High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light

AU - Rutkauskas, Marius

AU - Farrell, C.

AU - Dorrer, C.

AU - Marshall, K. L.

AU - Lundquist, T. R.

AU - Vedagarbha, P.

AU - Reid, D. T.

PY - 2015

Y1 - 2015

N2 - Comparison of high-resolution sub-surface microscopy shows that illumination with linear polarization resolves an edge with resolutions of 95 nm and 120 nm, depending on E-field orientation, while radial polarization achieves a resolution of 98 nm.

AB - Comparison of high-resolution sub-surface microscopy shows that illumination with linear polarization resolves an edge with resolutions of 95 nm and 120 nm, depending on E-field orientation, while radial polarization achieves a resolution of 98 nm.

UR - http://www.scopus.com/inward/record.url?scp=84935431349&partnerID=8YFLogxK

U2 - 10.1364/CLEO_SI.2015.STh1H.7

DO - 10.1364/CLEO_SI.2015.STh1H.7

M3 - Conference contribution

AN - SCOPUS:84935431349

SN - 978-1-55752-968-8

BT - CLEO: Science and Innovations, CLEO-SI 2015

PB - OSA Publishing

T2 - CLEO: Science and Innovations 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light

Abstract

Conference

ASJC Scopus subject areas

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