High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light

Marius Rutkauskas, C. Farrell, C. Dorrer, K. L. Marshall, T. R. Lundquist, P. Vedagarbha, D. T. Reid

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Comparison of high-resolution sub-surface microscopy shows that illumination with linear polarization resolves an edge with resolutions of 95 nm and 120 nm, depending on E-field orientation, while radial polarization achieves a resolution of 98 nm.

Original languageEnglish
Title of host publicationCLEO: Science and Innovations, CLEO-SI 2015
PublisherOptical Society of America
ISBN (Print)978-1-55752-968-8
DOIs
Publication statusPublished - 2015
EventCLEO: Science and Innovations 2015 - San Jose, United States
Duration: 10 May 201515 May 2015

Conference

ConferenceCLEO: Science and Innovations 2015
Abbreviated titleCLEO-SI 2015
CountryUnited States
CitySan Jose
Period10/05/1515/05/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Rutkauskas, M., Farrell, C., Dorrer, C., Marshall, K. L., Lundquist, T. R., Vedagarbha, P., & Reid, D. T. (2015). High-resolution sub-surface microscopy of CMOS integrated circuits using radially polarized light. In CLEO: Science and Innovations, CLEO-SI 2015 Optical Society of America. https://doi.org/10.1364/CLEO_SI.2015.STh1H.7