A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2-1.3 μm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.
|Number of pages||11|
|Publication status||Published - 22 Sept 2014|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
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Maria Ana Cataluna
- School of Engineering & Physical Sciences - Associate Professor
- School of Engineering & Physical Sciences, Institute of Photonics and Quantum Sciences - Associate Professor
Person: Academic (Research & Teaching)