High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

Daniil I. Nikitichev, Ying Ding, Myke Ruiz, M. Calligaro, N. Michel, Michel Krakowski, Igor L. Krestnikov, Daniil A. Livshits, Maria Ana Cataluna, Edik U. Rafailov

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.

Original languageEnglish
Pages (from-to)609-613
Number of pages5
JournalApplied Physics B: Lasers and Optics
Volume103
Issue number3
DOIs
Publication statusPublished - Jun 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers'. Together they form a unique fingerprint.

  • Cite this

    Nikitichev, D. I., Ding, Y., Ruiz, M., Calligaro, M., Michel, N., Krakowski, M., Krestnikov, I. L., Livshits, D. A., Cataluna, M. A., & Rafailov, E. U. (2011). High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers. Applied Physics B: Lasers and Optics, 103(3), 609-613. https://doi.org/10.1007/s00340-010-4290-5