High-power, high-voltage IGBT applications: Series connection of IGBTs or multilevel converters?

A. M. Massoud, S. J. Finney, B. W. Williams

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this paper a detailed quantitative comparison between two competing high-voltage converter technologies is performed, namely series connection of semiconductor power devices versus multilevel converters. The comparison is based on converter losses (conduction and switching), total harmonic distortion, and distortion factor for the output phase and line voltages at different modulation frequency ratios. A new method is presented for calculating the conduction loss of cascaded-type multilevel converters which use carrier-based pulse width modulation.

Original languageEnglish
Pages (from-to)763-778
Number of pages16
JournalInternational Journal of Electronics
Volume90
Issue number11-12
Publication statusPublished - Nov 2003

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