High performance planar Ge-on-Si single-photon avalanche diode detectors

Peter Vines, Kateryna Kuzmenko, Jarosław Kirdoda, Derek D. S. Dumas, Muhammad M. Mirza, Ross W. Millar, Douglas J. Paul, Gerald Stuart Buller

Research output: Contribution to journalArticle

Abstract

We present a new generation of planar Ge-on-Si single-photon avalanche diode (SPAD) detectors for picosecond resolution timing applications in the wavelength region of 1300-1550 nm. This planar geometry has enabled a significant step-change in performance of this class of SPAD, allowing large excess biases and resulting in a single-photon detection efficiency of 38 % at 125 K at a detection wavelength of 1310 nm. This leads to a record low noise equivalent power for Ge-on-Si SPADs of 2 × 10-16 WHz-1/2, a fifty-fold improvement over the best result for a mesa geometry SPAD. For the first time, InGaAs/InP and Ge-on-Si SPADs have been compared under similar operating conditions, with the Ge-on-Si SPADs exhibiting considerably lower afterpulsing effects, indicating the potential for high count rate operation. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards the development of large arrays of high efficiency, high count rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications.
Original languageEnglish
JournalNature Communications
Publication statusSubmitted - 27 Sep 2018

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    Dataset for "High performance planar Ge-on-Si single-photon avalanche diode detectors"

    Vines, P. (Creator), Kuzmenko, K. (Creator), Kirdoda, J. (Creator), Dumas, D. D. S. (Creator), Mirza, M. M. (Creator), Millar, R. W. (Creator), Paul, D. J. (Creator), Buller, G. S. (Creator), Heriot-Watt University, 28 Nov 2018

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    Vines, P., Kuzmenko, K., Kirdoda, J., Dumas, D. D. S., Mirza, M. M., Millar, R. W., Paul, D. J., & Buller, G. S. (2018). High performance planar Ge-on-Si single-photon avalanche diode detectors. Manuscript submitted for publication.