High performance, large area, uncooled detectors for mid-infrared wavelengths

J. G. Crowder; C. T. Elliott; H. R. Hardaway

doi:10.1049/el:20010072

High performance, large area, uncooled detectors for mid-infrared wavelengths

J. G. Crowder
, C. T. Elliott
, H. R. Hardaway

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The demonstration of D* in excess of 2×10⁹ cm Hz^1/2W^-1 from 1 mm diameter, uncooled, semiconductor diode detectors with a peak wavelength response at 5 µm is reported. They are based on heterostructures in the In_1-xAl_xSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching, without signal-to-noise degradation, and the potential for high frequency response above 100 kHz.

Original language	English
Pages (from-to)	116-118
Number of pages	3
Journal	Electronics Letters
Volume	37
Issue number	2
DOIs	https://doi.org/10.1049/el:20010072
Publication status	Published - 18 Jan 2001

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title = "High performance, large area, uncooled detectors for mid-infrared wavelengths",

abstract = "The demonstration of D* in excess of 2×109 cm Hz1/2W-1 from 1 mm diameter, uncooled, semiconductor diode detectors with a peak wavelength response at 5 µm is reported. They are based on heterostructures in the In1-xAlxSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching, without signal-to-noise degradation, and the potential for high frequency response above 100 kHz.",

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AU - Crowder, J. G.

AU - Elliott, C. T.

AU - Hardaway, H. R.

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Y1 - 2001/1/18

N2 - The demonstration of D* in excess of 2×109 cm Hz1/2W-1 from 1 mm diameter, uncooled, semiconductor diode detectors with a peak wavelength response at 5 µm is reported. They are based on heterostructures in the In1-xAlxSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching, without signal-to-noise degradation, and the potential for high frequency response above 100 kHz.

AB - The demonstration of D* in excess of 2×109 cm Hz1/2W-1 from 1 mm diameter, uncooled, semiconductor diode detectors with a peak wavelength response at 5 µm is reported. They are based on heterostructures in the In1-xAlxSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching, without signal-to-noise degradation, and the potential for high frequency response above 100 kHz.

UR - https://www.scopus.com/pages/publications/0035132270

U2 - 10.1049/el:20010072

DO - 10.1049/el:20010072

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VL - 37

SP - 116

EP - 118

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

High performance, large area, uncooled detectors for mid-infrared wavelengths

Abstract

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