Abstract
The demonstration of D* in excess of 2×109 cm Hz1/2W-1 from 1 mm diameter, uncooled, semiconductor diode detectors with a peak wavelength response at 5 µm is reported. They are based on heterostructures in the In1-xAlxSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching, without signal-to-noise degradation, and the potential for high frequency response above 100 kHz.
Original language | English |
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Pages (from-to) | 116-118 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 37 |
Issue number | 2 |
DOIs | |
Publication status | Published - 18 Jan 2001 |