High gain signal amplification in an InSb transphasor at 77 K

F. A P Tooley, S. D. Smith, C. T. Seaton

Research output: Contribution to journalArticle

Abstract

We present experimental observations of the variations of the input-output characteristic of a nonlinear Fabry-Perot resonator as a function of initial detuning. The characteristics include regions with various differential gains, or show hysteresis with the width of the bistable region being variable. Operating the device as a transphasor (optical transistor), a signal of 3 µW can be amplified with a signal power gain of up to 104 with the device operating at 77 K and 1819 cm-1.

Original languageEnglish
Pages (from-to)807-809
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number9
DOIs
Publication statusPublished - 1983

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high gain
power gain
transistors
resonators
hysteresis
output

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Tooley, F. A P ; Smith, S. D. ; Seaton, C. T. / High gain signal amplification in an InSb transphasor at 77 K. In: Applied Physics Letters. 1983 ; Vol. 43, No. 9. pp. 807-809.
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Tooley, FAP, Smith, SD & Seaton, CT 1983, 'High gain signal amplification in an InSb transphasor at 77 K', Applied Physics Letters, vol. 43, no. 9, pp. 807-809. https://doi.org/10.1063/1.94515

High gain signal amplification in an InSb transphasor at 77 K. / Tooley, F. A P; Smith, S. D.; Seaton, C. T.

In: Applied Physics Letters, Vol. 43, No. 9, 1983, p. 807-809.

Research output: Contribution to journalArticle

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