High-Gain, Low-Noise Ge-On-Si Short-Wave Infrared Avalanche Photodiodes Linear Arrays

Jarosław Kirdoda; Muhammad M. A. Mirza; Mrudul Modak; Xin Yi; Qingyu Tian; Lisa Saalbach; Fiona Fleming; Derek C. S. Dumas; C. K. Smith; Xiao Jin; Levi Tegg; Sima Aminorroaya Yamini; John P. R. David; Douglas J. Paul; Gerald S. Buller; Rachel W. Millar

doi:10.1109/ipc65510.2025.11282016

High-Gain, Low-Noise Ge-On-Si Short-Wave Infrared Avalanche Photodiodes Linear Arrays

Jarosław Kirdoda
, Muhammad M. A. Mirza
, Mrudul Modak
, Xin Yi
, Qingyu Tian
, Lisa Saalbach
, Fiona Fleming
, Derek C. S. Dumas
, C. K. Smith
, Xiao Jin
, Levi Tegg
, Sima Aminorroaya Yamini
, John P. R. David
, Douglas J. Paul
, Gerald S. Buller
, Rachel W. Millar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the design, fabrication, and characterization of a 1×10 pseudo-planar germanium-on-silicon (Ge-on-Si) avalanche photodiode (APD) linear array operating at 1550 nm wavelength for short-wave infrared (SWIR) detection compatible with CMOS integration. At room temperature, devices exhibit high gains of up to 101 with a corresponding responsivity of 29 A/W, and demonstrate an excess noise factor of 3.1 for a gain of 20; believed to be record for SWIR APDs on Si. The array characterised exhibits good uniformity across 10 pixels with <1.8% variation in V bd. The devices sustain stable performance up to 378 K with a temperature dependence of breakdown voltage (C_bd ) of 57mV/K. This Ge-on-Si APD array offers a low-cost, highperformance platform for integration with CMOS photonics in LiDAR and free-space optical communication.

Original language	English
Title of host publication	2025 IEEE Photonics Conference (IPC)
Publisher	IEEE
ISBN (Electronic)	9798331525590
ISBN (Print)	9798331525606
DOIs	https://doi.org/10.1109/ipc65510.2025.11282016
Publication status	Published - 22 Dec 2025
Event	IEEE Photonics Conference 2025 - Singapore, Singapore Duration: 9 Nov 2025 → 13 Nov 2025

Conference

Conference	IEEE Photonics Conference 2025
Abbreviated title	IPC 2025
Country/Territory	Singapore
City	Singapore
Period	9/11/25 → 13/11/25

Keywords

Performance evalutation
Temperature dependence
Temperature
Laser radar
Free=space optical communication
Noise
Avalance phtodiodes
Silicon
Photonics
Optical arrays
Ge-on-Si
avalanche photodiode
SWIR
CMOS integration
APD array

Access to Document

10.1109/ipc65510.2025.11282016

Cite this

Kirdoda, J., Mirza, M. M. A., Modak, M., Yi, X., Tian, Q., Saalbach, L., Fleming, F., Dumas, D. C. S., Smith, C. K., Jin, X., Tegg, L., Yamini, S. A., David, J. P. R., Paul, D. J., Buller, G. S., & Millar, R. W. (2025). High-Gain, Low-Noise Ge-On-Si Short-Wave Infrared Avalanche Photodiodes Linear Arrays. In 2025 IEEE Photonics Conference (IPC) Article 11282016 IEEE. https://doi.org/10.1109/ipc65510.2025.11282016

@inproceedings{55a33b8d899d4ce8af9898e68fccea2b,

title = "High-Gain, Low-Noise Ge-On-Si Short-Wave Infrared Avalanche Photodiodes Linear Arrays",

abstract = "We report the design, fabrication, and characterization of a 1×10 pseudo-planar germanium-on-silicon (Ge-on-Si) avalanche photodiode (APD) linear array operating at 1550 nm wavelength for short-wave infrared (SWIR) detection compatible with CMOS integration. At room temperature, devices exhibit high gains of up to 101 with a corresponding responsivity of 29 A/W, and demonstrate an excess noise factor of 3.1 for a gain of 20; believed to be record for SWIR APDs on Si. The array characterised exhibits good uniformity across 10 pixels with <1.8\% variation in V bd. The devices sustain stable performance up to 378 K with a temperature dependence of breakdown voltage (Cbd ) of 57mV/K. This Ge-on-Si APD array offers a low-cost, highperformance platform for integration with CMOS photonics in LiDAR and free-space optical communication.",

keywords = "Performance evalutation, Temperature dependence, Temperature, Laser radar, Free=space optical communication, Noise, Avalance phtodiodes, Silicon, Photonics, Optical arrays, Ge-on-Si, avalanche photodiode, SWIR, CMOS integration, APD array",

author = "Jaros{\l}aw Kirdoda and Mirza, \{Muhammad M. A.\} and Mrudul Modak and Xin Yi and Qingyu Tian and Lisa Saalbach and Fiona Fleming and Dumas, \{Derek C. S.\} and Smith, \{C. K.\} and Xiao Jin and Levi Tegg and Yamini, \{Sima Aminorroaya\} and David, \{John P. R.\} and Paul, \{Douglas J.\} and Buller, \{Gerald S.\} and Millar, \{Rachel W.\}",

year = "2025",

month = dec,

day = "22",

doi = "10.1109/ipc65510.2025.11282016",

language = "English",

isbn = "9798331525606",

booktitle = "2025 IEEE Photonics Conference (IPC)",

publisher = "IEEE",

address = "United States",

note = "IEEE Photonics Conference 2025, IPC 2025 ; Conference date: 09-11-2025 Through 13-11-2025",

}

Kirdoda, J, Mirza, MMA, Modak, M, Yi, X, Tian, Q, Saalbach, L , Fleming, F, Dumas, DCS, Smith, CK, Jin, X, Tegg, L, Yamini, SA, David, JPR, Paul, DJ, Buller, GS & Millar, RW 2025, High-Gain, Low-Noise Ge-On-Si Short-Wave Infrared Avalanche Photodiodes Linear Arrays. in 2025 IEEE Photonics Conference (IPC)., 11282016, IEEE, IEEE Photonics Conference 2025, Singapore, Singapore, 9/11/25. https://doi.org/10.1109/ipc65510.2025.11282016

TY - GEN

T1 - High-Gain, Low-Noise Ge-On-Si Short-Wave Infrared Avalanche Photodiodes Linear Arrays

AU - Kirdoda, Jarosław

AU - Mirza, Muhammad M. A.

AU - Modak, Mrudul

AU - Yi, Xin

AU - Tian, Qingyu

AU - Saalbach, Lisa

AU - Fleming, Fiona

AU - Dumas, Derek C. S.

AU - Smith, C. K.

AU - Jin, Xiao

AU - Tegg, Levi

AU - Yamini, Sima Aminorroaya

AU - David, John P. R.

AU - Paul, Douglas J.

AU - Buller, Gerald S.

AU - Millar, Rachel W.

PY - 2025/12/22

Y1 - 2025/12/22

N2 - We report the design, fabrication, and characterization of a 1×10 pseudo-planar germanium-on-silicon (Ge-on-Si) avalanche photodiode (APD) linear array operating at 1550 nm wavelength for short-wave infrared (SWIR) detection compatible with CMOS integration. At room temperature, devices exhibit high gains of up to 101 with a corresponding responsivity of 29 A/W, and demonstrate an excess noise factor of 3.1 for a gain of 20; believed to be record for SWIR APDs on Si. The array characterised exhibits good uniformity across 10 pixels with <1.8% variation in V bd. The devices sustain stable performance up to 378 K with a temperature dependence of breakdown voltage (Cbd ) of 57mV/K. This Ge-on-Si APD array offers a low-cost, highperformance platform for integration with CMOS photonics in LiDAR and free-space optical communication.

AB - We report the design, fabrication, and characterization of a 1×10 pseudo-planar germanium-on-silicon (Ge-on-Si) avalanche photodiode (APD) linear array operating at 1550 nm wavelength for short-wave infrared (SWIR) detection compatible with CMOS integration. At room temperature, devices exhibit high gains of up to 101 with a corresponding responsivity of 29 A/W, and demonstrate an excess noise factor of 3.1 for a gain of 20; believed to be record for SWIR APDs on Si. The array characterised exhibits good uniformity across 10 pixels with <1.8% variation in V bd. The devices sustain stable performance up to 378 K with a temperature dependence of breakdown voltage (Cbd ) of 57mV/K. This Ge-on-Si APD array offers a low-cost, highperformance platform for integration with CMOS photonics in LiDAR and free-space optical communication.

KW - Performance evalutation

KW - Temperature dependence

KW - Temperature

KW - Laser radar

KW - Free=space optical communication

KW - Noise

KW - Avalance phtodiodes

KW - Silicon

KW - Photonics

KW - Optical arrays

KW - Ge-on-Si

KW - avalanche photodiode

KW - SWIR

KW - CMOS integration

KW - APD array

U2 - 10.1109/ipc65510.2025.11282016

DO - 10.1109/ipc65510.2025.11282016

M3 - Conference contribution

SN - 9798331525606

BT - 2025 IEEE Photonics Conference (IPC)

PB - IEEE

T2 - IEEE Photonics Conference 2025

Y2 - 9 November 2025 through 13 November 2025

ER -

High-Gain, Low-Noise Ge-On-Si Short-Wave Infrared Avalanche Photodiodes Linear Arrays

Abstract

Conference

Keywords

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