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High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

  • Roland Nagy
  • , Matthias Niethammer
  • , Matthias Widmann
  • , Yu-Chen Chen
  • , Péter Udvarhelyi
  • , Cristian Bonato
  • , Jawad Ul Hassan
  • , Robin Karhu
  • , Ivan G. Ivanov
  • , Nguyen Tien Son
  • , Jeronimo R. Maze
  • , Takeshi Ohshima
  • , Öney O. Soykal
  • , Ádám Gali
  • , Sang-Yun Lee
  • , Florian Kaiser
  • , Jörg Wrachtrup

Research output: Contribution to journal › Article › peer-review

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Abstract

Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4A2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
Original languageEnglish
Article number1954
JournalNature Communications
Volume10
DOIs
Publication statusPublished - 26 Apr 2019

ASJC Scopus subject areas

  • General Chemistry
  • General Biochemistry,Genetics and Molecular Biology
  • General Physics and Astronomy

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