High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Roland Nagy, Matthias Niethammer, Matthias Widmann, Yu-Chen Chen, Péter Udvarhelyi, Cristian Bonato, Jawad Ul Hassan, Robin Karhu, Ivan G. Ivanov, Nguyen Tien Son, Jeronimo R. Maze, Takeshi Ohshima, Öney O. Soykal, Ádám Gali, Sang-Yun Lee, Florian Kaiser, Jörg Wrachtrup

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)
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Abstract

Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4A2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
Original languageEnglish
Article number1954
JournalNature Communications
Volume10
DOIs
Publication statusPublished - 26 Apr 2019

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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